{"id":"arxiv:0904.1278","kind":"preprint","title":"Pressure-induced Superconductivity in Crystalline Boron Nanowires","authors":["Liling Sun","Takahiro Matsuoka","Yasuyuki Tamari","Katsuya Shimizu","Jifa Tian","Yuan Tian","Chendong Zhang","Chengmin Shen","Wei Yi","Hongjun Gao","Jianqi Li","Xiaoli Dong","Zhongxian Zhao"],"author_count":13,"year":2009,"published":"2009-04-08","venue":"Phys. Rev. B (R), 79,140505 (2009)","cited_by":null,"doi":"10.1103/physrevb.79.140505","arxiv_id":"0904.1278","nct_id":null,"source_url":"https://arxiv.org/abs/0904.1278","archive_url":"https://space-kitty.com/papers/arxiv:0904.1278","updated":"2009-04-08","pmid":null,"pmcid":null,"openalex_id":null,"pdf_url":"https://arxiv.org/pdf/0904.1278","abstract":"We report high-pressure induced superconductivity in boron nanowires (BNWs) with rhombohedral crystal structure. Obviously different from bulk rhombohedral boron, these BNWs show a semiconductor-metal transition at much lower pressure than bulk boron. Also, we found these BNWs become superconductors with Tc=1.5 K at 84 GPa, at the pressure of which bulk boron is still a semiconductor, via in-situ resistance measurements in a diamond anvil cell. With increasing pressure, Tc of the BNWs increases. The occurrence of superconductivity in the BNWs at a pressure as low as 84 GPa probably arises from the size effect.","abstract_license":"CC0-1.0 (arXiv descriptive metadata)","license":null,"is_open_access":false,"retracted":false,"peer_reviewed":false,"categories":["cond-mat.supr-con"],"details":null,"provenance":"arxiv","attribution":"Abstract: arXiv descriptive metadata (CC0). Thank you to arXiv for use of its open access interoperability. This service was not reviewed or approved by, nor does it necessarily express or reflect the policies or opinions of, arXiv.","topics":[],"cited_in_dossiers":[]}