{"id":"arxiv:1402.4013","kind":"article","title":"The Short-term Memory (D.C. Response) of the Memristor Demonstrates the Causes of the Memristor Frequency Effect","authors":["Ella Gale","Ben de Lacy Costello","Victor Erokhin","Andrew Adamatzky"],"author_count":4,"year":2014,"published":"2014-02-17","venue":"IEEE International Symposium on Circuits and Systems proceedings","cited_by":6,"doi":"10.1109/iscas.2014.6865758","arxiv_id":"1402.4013","nct_id":null,"source_url":"https://arxiv.org/abs/1402.4013","archive_url":"https://space-kitty.com/papers/arxiv:1402.4013","updated":"2014-02-17","pmid":null,"pmcid":null,"openalex_id":"W2038559009","pdf_url":"https://arxiv.org/pdf/1402.4013","abstract":"A memristor is often identified by showing its distinctive pinched hysteresis curve and testing for the effect of frequency. The hysteresis size should relate to frequency and shrink to zero as the frequency approaches infinity. Although mathematically understood, the material causes for this are not well known. The d.c. response of the memristor is a decaying curve with its own timescale. We show via mathematical reasoning that this decaying curve when transformed to a.c. leads to the frequency effect by considering a descretized curve. We then demonstrate the validity of this approach with experimental data from two different types of memristors.","abstract_license":"CC0-1.0 (arXiv descriptive metadata)","license":null,"is_open_access":false,"retracted":false,"peer_reviewed":null,"categories":["cs.ET","cond-mat.mtrl-sci","cs.AR","physics.chem-ph"],"details":null,"provenance":"arxiv","attribution":"Abstract: arXiv descriptive metadata (CC0). Thank you to arXiv for use of its open access interoperability. This service was not reviewed or approved by, nor does it necessarily express or reflect the policies or opinions of, arXiv.","topics":[{"slug":"semiconductor-frontiers","name":"Semiconductor Device Frontiers","domain_slug":"materials"}],"cited_in_dossiers":[]}