{"id":"arxiv:1406.5257","kind":"preprint","title":"Self-consistent Capacitance-Voltage Characterization of Gate-all-around Graded Nanowire Transistor","authors":["Saeed Uz Zaman Khan","Md. Shafayat Hossain","Md. Obaidul Hossen","Fahim Ur Rahman","Rifat Zaman","Quazi D. M. Khosru"],"author_count":6,"year":2014,"published":"2014-06-20","venue":null,"cited_by":1,"doi":null,"arxiv_id":"1406.5257","nct_id":null,"source_url":"https://arxiv.org/abs/1406.5257","archive_url":"https://space-kitty.com/papers/arxiv:1406.5257","updated":"2014-06-20","pmid":null,"pmcid":null,"openalex_id":"W2507928196","pdf_url":"https://arxiv.org/pdf/1406.5257","abstract":"This paper presents a self-consistent numerical model for calculating the charge profile and gate capacitance and therefore obtaining C-V characterization for a gate-all-around graded nanowire MOSFET with a high mobility axially graded In0.75Ga0.25As + In0.53Ga0.47As channel incorporating strain and atomic layer deposited Al2O3/20nm Ti gate. C-V characteristics with introduction and variation of In-composition grading and also grading in doping concentration are explored.Finite element method has been used to solve Poisson's equation and Schrödinger's equation self-consistently considering wave function penetration and other quantum effects to calculate gate capacitance and charge profile for different gate biases. The device parameters are taken from a recently introduced experimental device.","abstract_license":"CC0-1.0 (arXiv descriptive metadata)","license":null,"is_open_access":false,"retracted":false,"peer_reviewed":false,"categories":["cond-mat.mtrl-sci"],"details":null,"provenance":"arxiv","attribution":"Abstract: arXiv descriptive metadata (CC0). Thank you to arXiv for use of its open access interoperability. This service was not reviewed or approved by, nor does it necessarily express or reflect the policies or opinions of, arXiv.","topics":[{"slug":"semiconductor-frontiers","name":"Semiconductor Device Frontiers","domain_slug":"materials"}],"cited_in_dossiers":[]}