{"id":"arxiv:1804.00028","kind":"article","title":"One Million Percent Tunnel Magnetoresistance in a Magnetic van der Waals Heterostructure","authors":["Hyun Ho Kim","Bowen Yang","Tarun Patel","F. Sfigakis","Chenghe Li","Shangjie Tian","Hechang Lei","Adam W. Tsen"],"author_count":8,"year":2018,"published":"2018-07-12","venue":"Nano Letters","cited_by":307,"doi":"10.1021/acs.nanolett.8b01552","arxiv_id":"1804.00028","nct_id":null,"source_url":"https://doi.org/10.1021/acs.nanolett.8b01552","archive_url":"https://space-kitty.com/papers/arxiv:1804.00028","updated":"2018-07-18","pmid":"30001134","pmcid":null,"openalex_id":"W2796138271","pdf_url":"https://arxiv.org/pdf/1804.00028","abstract":"We report the observation of a very large negative magnetoresistance effect in a van der Waals tunnel junction incorporating a thin magnetic semiconductor, CrI3, as the active layer. At constant voltage bias, current increases by nearly one million percent upon application of a 2 Tesla field. The effect arises from a change between antiparallel to parallel alignment of spins across the different CrI3 layers. Our results elucidate the nature of the magnetic state in ultrathin CrI3 and present new opportunities for spintronics based on two-dimensional materials.","abstract_license":"CC0-1.0 (arXiv descriptive metadata)","license":null,"is_open_access":true,"retracted":false,"peer_reviewed":null,"categories":["Magnetic properties of thin films"],"details":null,"provenance":"openalex+arxiv","attribution":"Abstract: arXiv descriptive metadata (CC0). Thank you to arXiv for use of its open access interoperability. This service was not reviewed or approved by, nor does it necessarily express or reflect the policies or opinions of, arXiv.","topics":[{"slug":"2d-materials","name":"2D Materials & Van der Waals Heterostructures","domain_slug":"materials"}],"cited_in_dossiers":[]}