{"id":"arxiv:2510.17779","kind":"preprint","title":"Quench rate dependence of center formation in Er implanted Si","authors":["Mark A. Hughes","Huan Liu","Yaping Dan"],"author_count":3,"year":2025,"published":"2025-10-20","venue":null,"cited_by":null,"doi":null,"arxiv_id":"2510.17779","nct_id":null,"source_url":"https://arxiv.org/abs/2510.17779","archive_url":"https://space-kitty.com/papers/arxiv:2510.17779","updated":"2025-10-20","pmid":null,"pmcid":null,"openalex_id":null,"pdf_url":"https://arxiv.org/pdf/2510.17779","abstract":"Er implanted Si (Er:Si) is a promising candidate for scalable planar quantum memory (QM) applications. Er has a preference to coordinate with O impurities, and multiple types of Er center are typically formed after a post implant anneal. Float zone Si was implanted with 1018 cm-3 Er and separate samples were annealed using a rapid quench annealing technique at 950 degC for 10 min with quench rates of 5, 23, 46, 93, 185 and 400 degC/s. The evolution of photoluminescence (PL) peaks and their associated Er centers was tracked as a function of quench rate. Across all samples, five distinct Er centers were identified. Two centers, one with mixed Si and O coordination and one with Si-only coordination, exhibited fully resolved crystal-field splitting of the 4I15/2 ground state together with 2 to 3 hot lines from the 4I13/2 excited state; fitting of crystal-field parameters for both was consistent with C2v symmetry. The mixed Si and O coordinated center was suppressed at quench rates above 185 degC/s, while the Si-only coordinated center was progressively enhanced with increasing quench rate up to the maximum of 400 degC/s. These results demonstrate that rapid quench annealing has the potential to selectively stabilize a single, Si-coordinated Er center in Er:Si, which is required for QM applications.","abstract_license":"CC0-1.0 (arXiv descriptive metadata)","license":null,"is_open_access":false,"retracted":false,"peer_reviewed":false,"categories":["physics.app-ph"],"details":null,"provenance":"arxiv","attribution":"Abstract: arXiv descriptive metadata (CC0). Thank you to arXiv for use of its open access interoperability. This service was not reviewed or approved by, nor does it necessarily express or reflect the policies or opinions of, arXiv.","topics":[],"cited_in_dossiers":[]}