{"id":"arxiv:2511.18915","kind":"preprint","title":"Device-Scale Atomistic Simulations of Heat Transport in Advanced Field-Effect Transistors","authors":["Ke Xu","Gang Wang","Ting Liang","Yang Xiao","Dongliang Ding","Haichang Guo","Xiang Gao","Lei Tong","Xi Wan","Gang Zhang","Jianbin Xu"],"author_count":11,"year":2025,"published":"2025-11-24","venue":null,"cited_by":0,"doi":null,"arxiv_id":"2511.18915","nct_id":null,"source_url":"https://arxiv.org/abs/2511.18915","archive_url":"https://space-kitty.com/papers/arxiv:2511.18915","updated":"2025-11-25","pmid":null,"pmcid":null,"openalex_id":"W7106681139","pdf_url":"https://arxiv.org/pdf/2511.18915","abstract":"Self-heating in next-generation, high-power-density field-effect transistor limits performance and complicates fabrication. Here, we introduce NEP-FET, a machine-learned framework for device-scale heat transport simulations of field-effect transistors. Built upon the neuroevolution potential, the model extends a subset of the OMat24 dataset through an active-learning workflow to generate a chemically diverse, interface-rich reference set. Coupled with the FETMOD structure generator module, NEP-FET can simulate realistic field-effect transistor geometries at sub-micrometer scales containing millions of atoms, and delivers atomistic predictions of temperature fields, per-atom heat flux, and thermal stress in device structures with high fidelity. This framework enables rapid estimation of device-level metrics, including heat-flux density and effective thermal conductivity. Our results reveal pronounced differences in temperature distribution between fin-type and gate-all-around transistor architectures. The framework closes a key gap in multiscale device modeling by combining near-quantum-mechanical accuracy with device-scale throughput, providing a systematic route to explore heat transport and thermo-mechanical coupling in advanced transistors.","abstract_license":"CC0-1.0 (arXiv descriptive metadata)","license":null,"is_open_access":false,"retracted":false,"peer_reviewed":false,"categories":["cond-mat.mtrl-sci"],"details":null,"provenance":"arxiv","attribution":"Abstract: arXiv descriptive metadata (CC0). Thank you to arXiv for use of its open access interoperability. This service was not reviewed or approved by, nor does it necessarily express or reflect the policies or opinions of, arXiv.","topics":[{"slug":"semiconductor-frontiers","name":"Semiconductor Device Frontiers","domain_slug":"materials"}],"cited_in_dossiers":[]}