{"id":"arxiv:2606.08955","kind":"preprint","title":"Valley-Landscape Engineering in Bilayer WSe$_2$ Gate-All-Around Transistors","authors":["Katsunori Wakabayashi","Souren Adhikary","Kazuhito Tsukagoshi"],"author_count":3,"year":2026,"published":"2026-06-08","venue":null,"cited_by":0,"doi":null,"arxiv_id":"2606.08955","nct_id":null,"source_url":"https://arxiv.org/abs/2606.08955","archive_url":"https://space-kitty.com/papers/arxiv:2606.08955","updated":"2026-08-05","pmid":null,"pmcid":null,"openalex_id":"W7164017579","pdf_url":"https://arxiv.org/pdf/2606.08955","abstract":"The K-$Γ$ valence-band splitting $Δ_{KΓ}$ that governs hole transport in few-layer WSe$_2$ is not a fixed material constant. It is tuned by interlayer stacking, strain, pressure, and the dielectric and displacement-field environment. Its computed value also depends on the level of electronic-structure theory. Bilayer WSe$_2$ therefore realizes a tunable multivalley landscape rather than a single operating point. We combine first-principles inputs with an analytical two-valley device model for gate-all-around (GAA) field-effect transistors, and obtain three results. (i) The minimum subthreshold swing stays near the thermionic limit of $60$~mV~dec$^{-1}$ independently of layer number, because well below threshold the quantum capacitance remains far below the oxide capacitance. (ii) The effective mobility is set by the K-to-$Γ$ occupation ratio: valley redistribution is strong when $Δ_{KΓ}$ is of order $k_BT$ and fades toward single-valley $K$ transport as the splitting grows. (iii) In this small-splitting regime, biaxial strain tunes the effective mobility - and hence the on-current - through the valley population while the subthreshold swing stays at the thermionic limit, decoupling mobility control from electrostatic switching in a way distinct from scattering-based strategies. A symmetric GAA gate controls carrier density at essentially fixed splitting, and because an out-of-plane field increases $Δ_{KΓ}$, its midplane-symmetric potential avoids driving the channel out of the small-splitting regime. The design principle has two facets: small $Δ_{KΓ}$ - set by layer number, stacking, strain, and dielectric engineering - maximizes the valley tunability of $μ_\\mathrm{eff}$, whereas larger $Δ_{KΓ}$, for example through compressive strain, suppresses the heavy $Γ$ valley and maximizes the on-state mobility.","abstract_license":"CC0-1.0 (arXiv descriptive metadata)","license":null,"is_open_access":false,"retracted":false,"peer_reviewed":false,"categories":["cond-mat.mes-hall","cond-mat.mtrl-sci"],"details":null,"provenance":"arxiv","attribution":"Abstract: arXiv descriptive metadata (CC0). Thank you to arXiv for use of its open access interoperability. This service was not reviewed or approved by, nor does it necessarily express or reflect the policies or opinions of, arXiv.","topics":[{"slug":"semiconductor-frontiers","name":"Semiconductor Device Frontiers","domain_slug":"materials"}],"cited_in_dossiers":[]}