{"id":"arxiv:2610.05016","kind":"preprint","title":"A FeFET Voltage-to-Time Converter with Offset Trim by Programmed Multilevel State in 28-nm CMOS","authors":["Jeries Mattar","Hanaa Eqeiq","Stefan Dünkel","Halid Mulaosmanovic","Gunda Beernink","Sven Beyer","Nicolás Wainstein"],"author_count":7,"year":2026,"published":"2026-10-04","venue":null,"cited_by":0,"doi":null,"arxiv_id":"2610.05016","nct_id":null,"source_url":"https://arxiv.org/abs/2610.05016","archive_url":"https://space-kitty.com/papers/arxiv:2610.05016","updated":"2026-10-04","pmid":null,"pmcid":null,"openalex_id":"W7220667644","pdf_url":"https://arxiv.org/pdf/2610.05016","abstract":"The offset and gain of voltage-to-time converters (VTCs) in time-domain circuits vary with process, supply, and temperature. This work presents a VTC whose nonvolatile input-referred offset trim is the programmed multilevel state of the ferroelectric field-effect transistor (FeFET) that converts the input. Fabricated in 28-nm CMOS, the 6.07-$μ$m$^2$ VTC consists of a current-starved inverter with the FeFET and a parallel NMOS leaker in its tail, a capacitor bank, and a following inverter. The programmed state shifts the transfer curve onto the input range, leaving the gain to the capacitor bank and the leaker bias. Measured at 10~MS/s, centered states weaken the second harmonic from $-$12.5~dB in the low-threshold state to $-$32.2~dB and lower the static integral nonlinearity (INL) at 5~bit from 2.42 to 0.92~LSB. Post-layout simulations indicate that the proposed VTC can operate at 500~MS/s, drawing 2.0~$μ$W from a 0.9-V supply, with nearly unchanged distortion and gain up to 700~MS/s. Across simulated process corners and $\\pm$10\\,\\% supply variation, the input-referred offset is calibrated to within 10~mV and the gain to within 4\\,\\% of nominal by adjusting the programmed state and leaker bias.","abstract_license":"CC0-1.0 (arXiv descriptive metadata)","license":null,"is_open_access":false,"retracted":false,"peer_reviewed":false,"categories":["cs.ET"],"details":null,"provenance":"arxiv","attribution":"Abstract: arXiv descriptive metadata (CC0). Thank you to arXiv for use of its open access interoperability. This service was not reviewed or approved by, nor does it necessarily express or reflect the policies or opinions of, arXiv.","topics":[{"slug":"semiconductor-frontiers","name":"Semiconductor Device Frontiers","domain_slug":"materials"}],"cited_in_dossiers":[]}