{"id":"arxiv:2610.36492","kind":"preprint","title":"Demonstration of high output power (3.75 W/mm) with 31.8% PAE in Ga-Polar AlGaN/GaN HEMTs on sapphire at 94 GHz","authors":["Ruixin Bai","Swarnav Mukhopadhyay","Michael Elliott","Ryan Gilbert","Surjava Sanyal","Darryl Shima","Jiahao Chen","Rafael A. Choudhury","Kyudong Kim","Yu-Chun Wang","Ganesh Balakrishnan","Ahmad E. Islam","Andrew J. Green","Shubhra S. Pasayat","Chirag Gupta"],"author_count":15,"year":2026,"published":"2026-10-27","venue":"IEEE Microwave and Wireless Technology Letters, 2026","cited_by":null,"doi":"10.1109/lmwt.2026.3736479","arxiv_id":"2610.36492","nct_id":null,"source_url":"https://arxiv.org/abs/2610.36492","archive_url":"https://space-kitty.com/papers/arxiv:2610.36492","updated":"2026-10-27","pmid":null,"pmcid":null,"openalex_id":null,"pdf_url":"https://arxiv.org/pdf/2610.36492","abstract":"In this work, a recessed-gate Ga-polar AlGaN/GaN high-electron-mobility transistor (HEMT) on sapphire incorporating an AlGaN back-barrier for W-band operation is demonstrated. The device achieves a subthreshold slope of ~130 mV/dec, a peak transconductance of 0.75 S/mm, and an fmax exceeding 240 GHz. Continuous-wave load-pull measurements at 94 GHz show an output power of 3.75 W/mm with a power-added efficiency of 31.8%. This performance significantly exceeds the best previously reported Ga-polar devices on sapphire and approaches that of state-of-the-art Ga-polar devices on SiC, which provides a promising pathway toward high-performance W-band devices.","abstract_license":"CC0-1.0 (arXiv descriptive metadata)","license":null,"is_open_access":false,"retracted":false,"peer_reviewed":false,"categories":["physics.app-ph"],"details":null,"provenance":"arxiv","attribution":"Abstract: arXiv descriptive metadata (CC0). Thank you to arXiv for use of its open access interoperability. This service was not reviewed or approved by, nor does it necessarily express or reflect the policies or opinions of, arXiv.","topics":[{"slug":"semiconductor-frontiers","name":"Semiconductor Device Frontiers","domain_slug":"materials"}],"cited_in_dossiers":[]}