{"id":"doi:10.1002/ange.201411246","kind":"article","title":"Atomically Thin Arsenene and Antimonene: Semimetal–Semiconductor and Indirect–Direct Band‐Gap Transitions","authors":["Shengli Zhang","Zhong Yan","Yafei Li","Zhongfang Chen","Haibo Zeng"],"author_count":5,"year":2015,"published":"2015-01-07","venue":"Angewandte Chemie","cited_by":454,"doi":"10.1002/ange.201411246","arxiv_id":null,"nct_id":null,"source_url":"https://doi.org/10.1002/ange.201411246","archive_url":"https://space-kitty.com/papers/doi:10.1002/ange.201411246","updated":null,"pmid":null,"pmcid":null,"openalex_id":"W4251947157","pdf_url":null,"abstract":null,"abstract_license":null,"license":null,"is_open_access":false,"retracted":false,"peer_reviewed":null,"categories":["2D Materials and Applications"],"details":null,"provenance":"openalex","attribution":"Metadata and citation counts: OpenAlex (CC0).","topics":[{"slug":"semiconductor-frontiers","name":"Semiconductor Device Frontiers","domain_slug":"materials"}],"cited_in_dossiers":[]}