{"id":"doi:10.1002/anie.201402191","kind":"article","title":"Triazine‐Based Graphitic Carbon Nitride: a Two‐Dimensional Semiconductor","authors":["Gerardo Algara‐Siller","Nikolai Severin","Samantha Yu-ling Chong","Torbjörn Björkman","Robert G. Palgrave","Andrea Laybourn","Markus Antonietti","Yaroslav Z. Khimyak","Arkady V. Krasheninnikov","Jürgen P. Rabe","Ute A. Kaiser","Andrew Ian Cooper","Arne Thomas","Michael J. Bojdys"],"author_count":14,"year":2014,"published":"2014-05-18","venue":"Angewandte Chemie International Edition","cited_by":670,"doi":"10.1002/anie.201402191","arxiv_id":null,"nct_id":null,"source_url":"https://doi.org/10.1002/anie.201402191","archive_url":"https://space-kitty.com/papers/doi:10.1002/anie.201402191","updated":null,"pmid":"24838808","pmcid":null,"openalex_id":"W2170714139","pdf_url":null,"abstract":"Graphitic carbon nitride has been predicted to be structurally analogous to carbon-only graphite, yet with an inherent bandgap. We have grown, for the first time, macroscopically large crystalline thin films of triazine-based, graphitic carbon nitride (TGCN) using an ionothermal, interfacial reaction starting with the abundant monomer dicyandiamide. The films consist of stacked, two-dimensional (2D) crystals between a few and several hundreds of atomic layers in thickness. Scanning force and transmission electron microscopy show long-range, in-plane order, while optical spectroscopy, X-ray photoelectron spectroscopy, and density functional theory calculations corroborate a direct bandgap between 1.6 and 2.0 eV. Thus TGCN is of interest for electronic devices, such as field-effect transistors and light-emitting diodes.","abstract_license":"CC-BY (publisher license, via OpenAlex)","license":"cc-by","is_open_access":true,"retracted":false,"peer_reviewed":null,"categories":["2D Materials and Applications"],"details":null,"provenance":"openalex","attribution":"Abstract of \"Triazine‐Based Graphitic Carbon Nitride: a Two‐Dimensional Semiconductor\" by Gerardo Algara‐Siller, Nikolai Severin, Samantha Yu-ling Chong et al., https://doi.org/10.1002/anie.201402191, used under its Creative Commons Attribution license (CC-BY); markup removed, otherwise unmodified.","topics":[{"slug":"semiconductor-frontiers","name":"Semiconductor Device Frontiers","domain_slug":"materials"}],"cited_in_dossiers":[]}