{"id":"doi:10.1021/acsnano.5b01341","kind":"article","title":"Highly Stable, Dual-Gated MoS 2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage","authors":["Gwan‐Hyoung Lee","Xu Cui","Young Duck Kim","Ghidewon Arefe","Xian Zhang","Chul‐Ho Lee","Fan Ye","Kenji Watanabe","Takashi Taniguchi","Philip Kim","James Hone"],"author_count":11,"year":2015,"published":"2015-06-17","venue":"ACS Nano","cited_by":441,"doi":"10.1021/acsnano.5b01341","arxiv_id":null,"nct_id":null,"source_url":"https://doi.org/10.1021/acsnano.5b01341","archive_url":"https://space-kitty.com/papers/doi:10.1021/acsnano.5b01341","updated":null,"pmid":"26083310","pmcid":null,"openalex_id":"W2307514474","pdf_url":null,"abstract":null,"abstract_license":null,"license":null,"is_open_access":false,"retracted":false,"peer_reviewed":null,"categories":["2D Materials and Applications"],"details":null,"provenance":"openalex","attribution":"Metadata and citation counts: OpenAlex (CC0).","topics":[{"slug":"semiconductor-frontiers","name":"Semiconductor Device Frontiers","domain_slug":"materials"}],"cited_in_dossiers":[]}