{"id":"doi:10.1021/acsnano.8b01810","kind":"article","title":"Ferroelectric Field-Effect Transistors Based on MoS 2 and CuInP 2 S 6 Two-Dimensional van der Waals Heterostructure","authors":["Mengwei Si","Pai-Ying Liao","Gang Qiu","Yuqin Duan","Peide D. Ye"],"author_count":5,"year":2018,"published":"2018-06-26","venue":"ACS Nano","cited_by":392,"doi":"10.1021/acsnano.8b01810","arxiv_id":null,"nct_id":null,"source_url":"https://doi.org/10.1021/acsnano.8b01810","archive_url":"https://space-kitty.com/papers/doi:10.1021/acsnano.8b01810","updated":null,"pmid":"29944829","pmcid":null,"openalex_id":"W2810491924","pdf_url":null,"abstract":null,"abstract_license":null,"license":null,"is_open_access":false,"retracted":false,"peer_reviewed":null,"categories":["2D Materials and Applications"],"details":null,"provenance":"openalex","attribution":"Metadata and citation counts: OpenAlex (CC0).","topics":[{"slug":"semiconductor-frontiers","name":"Semiconductor Device Frontiers","domain_slug":"materials"}],"cited_in_dossiers":[]}