{"id":"doi:10.1038/nature11293","kind":"article","title":"A III–V nanowire channel on silicon for high-performance vertical transistors","authors":["Katsuhiro Tomioka","Masatoshi Yoshimura","Takashi Fukui"],"author_count":3,"year":2012,"published":"2012-08-01","venue":"Nature","cited_by":717,"doi":"10.1038/nature11293","arxiv_id":null,"nct_id":null,"source_url":"https://doi.org/10.1038/nature11293","archive_url":"https://space-kitty.com/papers/doi:10.1038/nature11293","updated":null,"pmid":"22854778","pmcid":null,"openalex_id":"W1970587745","pdf_url":null,"abstract":null,"abstract_license":null,"license":null,"is_open_access":false,"retracted":false,"peer_reviewed":null,"categories":["Nanowire Synthesis and Applications"],"details":null,"provenance":"openalex","attribution":"Metadata and citation counts: OpenAlex (CC0).","topics":[{"slug":"semiconductor-frontiers","name":"Semiconductor Device Frontiers","domain_slug":"materials"}],"cited_in_dossiers":[]}