{"id":"doi:10.1038/ncomms6143","kind":"article","title":"Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics","authors":["Rui Cheng","Shan Hao Jiang","Yu Chen","Yuan Liu","Nathan O. Weiss","Hung‐Chieh Cheng","Hao Wu","Yu Huang","Xiangfeng Duan"],"author_count":9,"year":2014,"published":"2014-10-08","venue":"Nature Communications","cited_by":514,"doi":"10.1038/ncomms6143","arxiv_id":null,"nct_id":null,"source_url":"https://doi.org/10.1038/ncomms6143","archive_url":"https://space-kitty.com/papers/doi:10.1038/ncomms6143","updated":null,"pmid":"25295573","pmcid":null,"openalex_id":"W1992837891","pdf_url":"https://www.nature.com/articles/ncomms6143.pdf","abstract":null,"abstract_license":null,"license":null,"is_open_access":true,"retracted":false,"peer_reviewed":null,"categories":["2D Materials and Applications"],"details":null,"provenance":"openalex","attribution":"Metadata and citation counts: OpenAlex (CC0).","topics":[{"slug":"semiconductor-frontiers","name":"Semiconductor Device Frontiers","domain_slug":"materials"}],"cited_in_dossiers":[]}