{"id":"doi:10.1038/ncomms9662","kind":"article","title":"Synthesis of large-area multilayer hexagonal boron nitride for high material performance","authors":["Soo Min Kim","Allen Long Hsu","Min Ho Park","Sang Hoon Chae","Seok Joon Yun","Joo Song Lee","Dae‐Hyun Cho","Wenjing Fang","Changgu Lee","Tomás Palacios","M. S. Dresselhaus","Ki Kang Kim","Young Hee Lee","Jing Kong"],"author_count":14,"year":2015,"published":"2015-10-28","venue":"Nature Communications","cited_by":566,"doi":"10.1038/ncomms9662","arxiv_id":null,"nct_id":null,"source_url":"https://doi.org/10.1038/ncomms9662","archive_url":"https://space-kitty.com/papers/doi:10.1038/ncomms9662","updated":null,"pmid":"26507400","pmcid":null,"openalex_id":"W2269429031","pdf_url":"https://www.nature.com/articles/ncomms9662.pdf","abstract":"Although hexagonal boron nitride (h-BN) is a good candidate for gate-insulating materials by minimizing interaction from substrate, further applications to electronic devices with available two-dimensional semiconductors continue to be limited by flake size. While monolayer h-BN has been synthesized on Pt and Cu foil using chemical vapour deposition (CVD), multilayer h-BN is still absent. Here we use Fe foil and synthesize large-area multilayer h-BN film by CVD with a borazine precursor. These films reveal strong cathodoluminescence and high mechanical strength (Young's modulus: 1.16 ± 0.1 TPa), reminiscent of formation of high-quality h-BN. The CVD-grown graphene on multilayer h-BN film yields a high carrier mobility of ∼ 24,000 cm(2) V(-1) s(-1) at room temperature, higher than that (∼ 13,000 (2) V(-1) s(-1)) with exfoliated h-BN. By placing additional h-BN on a SiO2/Si substrate for a MoS2 (WSe2) field-effect transistor, the doping effect from gate oxide is minimized and furthermore the mobility is improved by four (150) times.","abstract_license":"CC-BY (publisher license, via OpenAlex)","license":"cc-by","is_open_access":true,"retracted":false,"peer_reviewed":null,"categories":["2D Materials and Applications"],"details":null,"provenance":"openalex","attribution":"Abstract of \"Synthesis of large-area multilayer hexagonal boron nitride for high material performance\" by Soo Min Kim, Allen Long Hsu, Min Ho Park et al., https://doi.org/10.1038/ncomms9662, used under its Creative Commons Attribution license (CC-BY); markup removed, otherwise unmodified.","topics":[{"slug":"semiconductor-frontiers","name":"Semiconductor Device Frontiers","domain_slug":"materials"}],"cited_in_dossiers":[{"slug":"semiconductor-frontiers","title":"Semiconductor Device Frontiers: State of the Field (October 2026)","url":"https://space-kitty.com/dossiers/semiconductor-frontiers"}]}