{"id":"doi:10.1038/nnano.2010.279","kind":"article","title":"Single-layer MoS2 transistors","authors":["Branimir Radisavljevic","Aleksandra Rađenović","Jacopo Brivio","Valentina Giacometti","András Kis"],"author_count":5,"year":2011,"published":"2011-01-30","venue":"Nature Nanotechnology","cited_by":14962,"doi":"10.1038/nnano.2010.279","arxiv_id":null,"nct_id":null,"source_url":"https://doi.org/10.1038/nnano.2010.279","archive_url":"https://space-kitty.com/papers/doi:10.1038/nnano.2010.279","updated":null,"pmid":"21278752","pmcid":null,"openalex_id":"W2021994802","pdf_url":"https://www.nature.com/articles/nnano.2010.279.pdf","abstract":null,"abstract_license":null,"license":null,"is_open_access":true,"retracted":false,"peer_reviewed":null,"categories":["2D Materials and Applications"],"details":null,"provenance":"openalex","attribution":"Metadata and citation counts: OpenAlex (CC0).","topics":[{"slug":"semiconductor-frontiers","name":"Semiconductor Device Frontiers","domain_slug":"materials"}],"cited_in_dossiers":[]}