{"id":"doi:10.1038/s41467-017-02077-z","kind":"article","title":"A two-dimensional Fe-doped SnS2 magnetic semiconductor","authors":["Bo Li","Tao Xing","Mianzeng Zhong","Le Huang","Na Lei","Jun Zhang","Jingbo Li","Zhongming Wei"],"author_count":8,"year":2017,"published":"2017-11-29","venue":"Nature Communications","cited_by":425,"doi":"10.1038/s41467-017-02077-z","arxiv_id":null,"nct_id":null,"source_url":"https://doi.org/10.1038/s41467-017-02077-z","archive_url":"https://space-kitty.com/papers/doi:10.1038/s41467-017-02077-z","updated":null,"pmid":"29208966","pmcid":null,"openalex_id":"W2768331633","pdf_url":"https://www.nature.com/articles/s41467-017-02077-z.pdf","abstract":"Abstract Magnetic two-dimensional materials have attracted considerable attention for their significant potential application in spintronics. In this study, we present a high-quality Fe-doped SnS2 monolayer exfoliated using a micromechanical cleavage method. Fe atoms were doped at the Sn atom sites, and the Fe contents are ∼2.1%, 1.5%, and 1.1%. The field-effect transistors based on the Fe0.021Sn0.979S2 monolayer show n-type behavior and exhibit high optoelectronic performance. Magnetic measurements show that pure SnS2 is diamagnetic, whereas Fe0.021Sn0.979S2 exhibits ferromagnetic behavior with a perpendicular anisotropy at 2 K and a Curie temperature of ~31 K. Density functional theory calculations show that long-range ferromagnetic ordering in the Fe-doped SnS2 monolayer is energetically stable, and the estimated Curie temperature agrees well with the results of our experiment. The results suggest that Fe-doped SnS2 has significant potential in future nanoelectronic, magnetic, and optoelectronic applications.","abstract_license":"CC-BY (publisher license, via OpenAlex)","license":"cc-by","is_open_access":true,"retracted":false,"peer_reviewed":null,"categories":["2D Materials and Applications"],"details":null,"provenance":"openalex","attribution":"Abstract of \"A two-dimensional Fe-doped SnS2 magnetic semiconductor\" by Bo Li, Tao Xing, Mianzeng Zhong et al., https://doi.org/10.1038/s41467-017-02077-z, used under its Creative Commons Attribution license (CC-BY); markup removed, otherwise unmodified.","topics":[{"slug":"semiconductor-frontiers","name":"Semiconductor Device Frontiers","domain_slug":"materials"}],"cited_in_dossiers":[]}