{"id":"doi:10.1038/s41928-019-0334-y","kind":"article","title":"Uniform and ultrathin high-κ gate dielectrics for two-dimensional electronic devices","authors":["Weisheng Li","Jian Feng Zhou","Songhua Cai","Zhihao Yu","Jialin Zhang","Nan Fang","Taotao Li","Yun Wu","Tangsheng Chen","Xiaoyu Xie","Haibo Ma","Ke Yan","Ningxuan Dai","Xiangjin Wu","Huijuan Zhao","Zixuan Wang","Daowei He","Lijia Pan","Yi Shi","Peng Wang","Wei Chen","Kosuke Nagashio","Xiangfeng Duan","Xinran Wang"],"author_count":24,"year":2019,"published":"2019-12-09","venue":"Nature Electronics","cited_by":460,"doi":"10.1038/s41928-019-0334-y","arxiv_id":null,"nct_id":null,"source_url":"https://doi.org/10.1038/s41928-019-0334-y","archive_url":"https://space-kitty.com/papers/doi:10.1038/s41928-019-0334-y","updated":null,"pmid":null,"pmcid":null,"openalex_id":"W2993687996","pdf_url":null,"abstract":null,"abstract_license":null,"license":null,"is_open_access":false,"peer_reviewed":null,"categories":["2D Materials and Applications"],"details":null,"provenance":"openalex","attribution":"Metadata and citation counts: OpenAlex (CC0).","topics":[{"slug":"semiconductor-frontiers","name":"Semiconductor Device Frontiers","domain_slug":"materials"}],"cited_in_dossiers":[]}