{"topic":"semiconductor-frontiers","sort":"top","limit":25,"offset":0,"count":25,"papers":[{"id":"doi:10.1038/nnano.2010.279","kind":"article","title":"Single-layer MoS2 transistors","authors":["Branimir Radisavljevic","Aleksandra Rađenović","Jacopo Brivio","Valentina Giacometti","András Kis"],"author_count":5,"year":2011,"published":"2011-01-30","venue":"Nature Nanotechnology","cited_by":14962,"doi":"10.1038/nnano.2010.279","arxiv_id":null,"nct_id":null,"source_url":"https://doi.org/10.1038/nnano.2010.279","archive_url":"https://space-kitty.com/papers/doi:10.1038/nnano.2010.279","updated":null,"pmid":"21278752","pmcid":null,"openalex_id":"W2021994802","pdf_url":"https://www.nature.com/articles/nnano.2010.279.pdf","abstract":null,"abstract_license":null,"license":null,"is_open_access":true,"retracted":false,"peer_reviewed":null,"categories":["2D Materials and Applications"],"details":null,"provenance":"openalex","attribution":"Metadata and citation counts: OpenAlex (CC0)."},{"id":"doi:10.1038/s41586-018-0129-8","kind":"article","title":"Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions","authors":["Yuan Liu","Jian Guo","Enbo Zhu","Lei Liao","Sung‐Joon Lee","Mengning Ding","Imran Shakir","Vincent Gambin","Yu Huang","Xiangfeng Duan"],"author_count":10,"year":2018,"published":"2018-05-01","venue":"Nature","cited_by":2139,"doi":"10.1038/s41586-018-0129-8","arxiv_id":null,"nct_id":null,"source_url":"https://doi.org/10.1038/s41586-018-0129-8","archive_url":"https://space-kitty.com/papers/doi:10.1038/s41586-018-0129-8","updated":null,"pmid":"29769729","pmcid":null,"openalex_id":"W2804762466","pdf_url":null,"abstract":null,"abstract_license":null,"license":null,"is_open_access":false,"retracted":false,"peer_reviewed":null,"categories":["2D Materials and Applications"],"details":null,"provenance":"openalex","attribution":"Metadata and citation counts: OpenAlex (CC0)."},{"id":"doi:10.1038/ncomms6678","kind":"article","title":"Two-dimensional flexible nanoelectronics","authors":["Deji Akinwande","Nicholas Petrone","James Hone"],"author_count":3,"year":2014,"published":"2014-12-17","venue":"Nature Communications","cited_by":1919,"doi":"10.1038/ncomms6678","arxiv_id":null,"nct_id":null,"source_url":"https://doi.org/10.1038/ncomms6678","archive_url":"https://space-kitty.com/papers/doi:10.1038/ncomms6678","updated":null,"pmid":"25517105","pmcid":null,"openalex_id":"W2088034301","pdf_url":"https://www.nature.com/articles/ncomms6678.pdf","abstract":null,"abstract_license":null,"license":null,"is_open_access":true,"retracted":false,"peer_reviewed":null,"categories":["2D Materials and Applications"],"details":null,"provenance":"openalex","attribution":"Metadata and citation counts: OpenAlex (CC0)."},{"id":"arxiv:1211.5090","kind":"article","title":"Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics","authors":["Thanasis Georgiou","R. Jalil","Branson D. Belle","L. Britnell","Roman Gorbachev","Sergey V. Morozov","Yong-Jin Kim","Ali Gholinia","Sarah J. Haigh","Oleg Makarovsky","L. Eaves","Leonid A. Ponomarenko","Andre K. Geim","Kostya S. Novoselov","Artem Mishchenko"],"author_count":15,"year":2012,"published":"2012-12-23","venue":"Nature Nanotechnology","cited_by":1752,"doi":"10.1038/nnano.2012.224","arxiv_id":"1211.5090","nct_id":null,"source_url":"https://doi.org/10.1038/nnano.2012.224","archive_url":"https://space-kitty.com/papers/arxiv:1211.5090","updated":"2012-11-21","pmid":"23263726","pmcid":null,"openalex_id":"W2078118572","pdf_url":"https://arxiv.org/pdf/1211.5090","abstract":"The celebrated electronic properties of graphene have opened way for materials just one-atom-thick to be used in the post-silicon electronic era. An important milestone was the creation of heterostructures based on graphene and other two-dimensional (2D) crystals, which can be assembled in 3D stacks with atomic layer precision. These layered structures have already led to a range of fascinating physical phenomena, and also have been used in demonstrating a prototype field effect tunnelling transistor - a candidate for post-CMOS technology. The range of possible materials which could be incorporated into such stacks is very large. Indeed, there are many other materials where layers are linked by weak van der Waals forces, which can be exfoliated and combined together to create novel highly-tailored heterostructures. Here we describe a new generation of field effect vertical tunnelling transistors where 2D tungsten disulphide serves as an atomically thin barrier between two layers of either mechanically exfoliated or CVD-grown graphene. Our devices have unprecedented current modulation exceeding one million at room temperature and can also operate on transparent and flexible substrates.","abstract_license":"CC0-1.0 (arXiv descriptive metadata)","license":null,"is_open_access":true,"retracted":false,"peer_reviewed":null,"categories":["2D Materials and Applications"],"details":null,"provenance":"openalex+arxiv","attribution":"Abstract: arXiv descriptive metadata (CC0). Thank you to arXiv for use of its open access interoperability. This service was not reviewed or approved by, nor does it necessarily express or reflect the policies or opinions of, arXiv."},{"id":"arxiv:1208.1078","kind":"article","title":"Integrated Circuits Based on Bilayer MoS 2 Transistors","authors":["Han Wang","Lili Yu","Yi‐Hsien Lee","Yumeng Shi","Allen Long Hsu","Matthew L. Chin","Lain‐Jong Li","Madan Dubey","Jing Kong","Tomás Palacios"],"author_count":10,"year":2012,"published":"2012-08-03","venue":"Nano Letters","cited_by":1751,"doi":"10.1021/nl302015v","arxiv_id":"1208.1078","nct_id":null,"source_url":"https://doi.org/10.1021/nl302015v","archive_url":"https://space-kitty.com/papers/arxiv:1208.1078","updated":"2012-08-06","pmid":"22862813","pmcid":null,"openalex_id":"W1975628705","pdf_url":"https://arxiv.org/pdf/1208.1078","abstract":"Two-dimensional (2D) materials, such as molybdenum disulfide (MoS2), have been shown to exhibit excellent electrical and optical properties. The semiconducting nature of MoS2 allows it to overcome the shortcomings of zero-bandgap graphene, while still sharing many of graphene's advantages for electronic and optoelectronic applications. Discrete electronic and optoelectronic components, such as field-effect transistors, sensors and photodetectors made from few-layer MoS2 show promising performance as potential substitute of Si in conventional electronics and of organic and amorphous Si semiconductors in ubiquitous systems and display applications. An important next step is the fabrication of fully integrated multi-stage circuits and logic building blocks on MoS2 to demonstrate its capability for complex digital logic and high-frequency ac applications. This paper demonstrates an inverter, a NAND gate, a static random access memory, and a five-stage ring oscillator based on a direct-coupled transistor logic technology. The circuits comprise between two to twelve transistors seamlessly integrated side-by-side on a single sheet of bilayer MoS2. Both enhancement-mode and depletion-mode transistors were fabricated thanks to the use of gate metals with different work functions.","abstract_license":"CC0-1.0 (arXiv descriptive metadata)","license":null,"is_open_access":true,"retracted":false,"peer_reviewed":null,"categories":["2D Materials and Applications"],"details":null,"provenance":"openalex+arxiv","attribution":"Abstract: arXiv descriptive metadata (CC0). Thank you to arXiv for use of its open access interoperability. This service was not reviewed or approved by, nor does it necessarily express or reflect the policies or opinions of, arXiv."},{"id":"arxiv:1403.0565","kind":"article","title":"Fast and Broadband Photoresponse of Few-Layer Black Phosphorus Field-Effect Transistors","authors":["Michele Buscema","Dirk J. Groenendijk","Sofya I. Blanter","Gary Alexander Steele","Herre S. J. van der Zant","Andrés Castellanos-Gómez"],"author_count":6,"year":2014,"published":"2014-05-12","venue":"Nano Letters","cited_by":1714,"doi":"10.1021/nl5008085","arxiv_id":"1403.0565","nct_id":null,"source_url":"https://doi.org/10.1021/nl5008085","archive_url":"https://space-kitty.com/papers/arxiv:1403.0565","updated":"2014-03-03","pmid":"24821381","pmcid":null,"openalex_id":"W2098827728","pdf_url":"https://arxiv.org/pdf/1403.0565","abstract":"Few-layer black phosphorus, a new elemental 2D material recently isolated by mechanical exfoliation, is a high-mobility layered semiconductor with a direct bandgap that is predicted to strongly depend on the number of layers, from 0.35 eV (bulk) to 2.0 eV (single-layer). Therefore, black phosphorus is an appealing candidate for tunable photodetection from the visible to the infrared part of the spectrum. We study the photoresponse of field-effect transistors (FETs) made of few-layer black phosphorus (3 nm to 8 nm thick), as a function of excitation wavelength, power and frequency. In the dark state, the black phosphorus FETs can be tuned both in hole and electron doping regimes allowing for ambipolar operation. We measure mobilities in the order of 100 cm2/V s and current ON/OFF ratio larger than 103. Upon illumination, the black phosphorus transistors show response to excitation wavelengths from the visible up to 940 nm and rise time of about 1 ms, demonstrating broadband and fast detection. The responsivity reaches 4.8 mA/W and it could be drastically enhanced by engineering a detector based on a PN junction. The ambipolar behavior coupled to the fast and broadband photodetection make few-layer black phosphorus a promising 2D material for photodetection across the visible and near-infrared part of the electromagnetic spectrum.","abstract_license":"CC0-1.0 (arXiv descriptive metadata)","license":null,"is_open_access":true,"retracted":false,"peer_reviewed":null,"categories":["2D Materials and Applications"],"details":null,"provenance":"openalex+arxiv","attribution":"Abstract: arXiv descriptive metadata (CC0). Thank you to arXiv for use of its open access interoperability. This service was not reviewed or approved by, nor does it necessarily express or reflect the policies or opinions of, arXiv."},{"id":"doi:10.1038/natrevmats.2016.52","kind":"review","title":"Two-dimensional semiconductors for transistors","authors":["Manish Chhowalla","Debdeep Jena","Hua Zhang"],"author_count":3,"year":2016,"published":"2016-08-17","venue":"Nature Reviews Materials","cited_by":1676,"doi":"10.1038/natrevmats.2016.52","arxiv_id":null,"nct_id":null,"source_url":"https://doi.org/10.1038/natrevmats.2016.52","archive_url":"https://space-kitty.com/papers/doi:10.1038/natrevmats.2016.52","updated":null,"pmid":null,"pmcid":null,"openalex_id":"W2507296830","pdf_url":null,"abstract":null,"abstract_license":null,"license":null,"is_open_access":false,"retracted":false,"peer_reviewed":null,"categories":["2D Materials and Applications"],"details":null,"provenance":"openalex","attribution":"Metadata and citation counts: OpenAlex (CC0)."},{"id":"doi:10.1038/nnano.2014.325","kind":"article","title":"Silicene field-effect transistors operating at room temperature","authors":["Li Tao","Eugenio Cinquanta","Daniele Chiappe","Carlo Grazianetti","Marco Fanciulli","Madan Dubey","Alessandro Molle","Deji Akinwande"],"author_count":8,"year":2015,"published":"2015-02-02","venue":"Nature Nanotechnology","cited_by":1658,"doi":"10.1038/nnano.2014.325","arxiv_id":null,"nct_id":null,"source_url":"https://doi.org/10.1038/nnano.2014.325","archive_url":"https://space-kitty.com/papers/doi:10.1038/nnano.2014.325","updated":null,"pmid":"25643256","pmcid":null,"openalex_id":"W1986895442","pdf_url":null,"abstract":null,"abstract_license":null,"license":"other-oa","is_open_access":true,"retracted":false,"peer_reviewed":null,"categories":["2D Materials and Applications"],"details":null,"provenance":"openalex","attribution":"Metadata and citation counts: OpenAlex (CC0)."},{"id":"doi:10.1038/s41586-021-03472-9","kind":"article","title":"Ultralow contact resistance between semimetal and monolayer semiconductors","authors":["Pin‐Chun Shen","Cong Su","Yuxuan Cosmi Lin","Ang‐Sheng Chou","Chao-Ching Cheng","Ji Hoon Park","Ming‐Hui Chiu","Ang‐Yu Lu","Hao‐Ling Tang","Mohammad Mahdi Tavakoli","Gregory Pitner","Xiang Ji","Zhengyang Cai","Nannan Mao","Jiangtao Wang","Vincent Tung","Ju Li","Jeffrey Bokor A","Alex K. Zettl","Chih‐I Wu","Tomás Palacios","Lain‐Jong Li","Jing Kong"],"author_count":23,"year":2021,"published":"2021-05-12","venue":"Nature","cited_by":1410,"doi":"10.1038/s41586-021-03472-9","arxiv_id":null,"nct_id":null,"source_url":"https://doi.org/10.1038/s41586-021-03472-9","archive_url":"https://space-kitty.com/papers/doi:10.1038/s41586-021-03472-9","updated":null,"pmid":"33981050","pmcid":null,"openalex_id":"W3160045927","pdf_url":null,"abstract":null,"abstract_license":null,"license":null,"is_open_access":false,"retracted":false,"peer_reviewed":null,"categories":["2D Materials and Applications"],"details":null,"provenance":"openalex","attribution":"Metadata and citation counts: OpenAlex (CC0)."},{"id":"arxiv:1211.0072","kind":"article","title":"Electrical control of neutral and charged excitons in a monolayer semiconductor","authors":["Jason Ross","Sanfeng Wu","Hongyi Yu","N. Ghimire","Aaron M. Jones","Grant Aivazian","Jiaqiang Yan","David G. Mandrus","Di Xiao","Wang Yao","Xiaodong Xu"],"author_count":11,"year":2013,"published":"2013-02-12","venue":"Nature Communications","cited_by":1590,"doi":"10.1038/ncomms2498","arxiv_id":"1211.0072","nct_id":null,"source_url":"https://doi.org/10.1038/ncomms2498","archive_url":"https://space-kitty.com/papers/arxiv:1211.0072","updated":"2013-02-15","pmid":"23403575","pmcid":null,"openalex_id":"W1983190782","pdf_url":"https://www.nature.com/articles/ncomms2498.pdf","abstract":"Monolayer group VI transition metal dichalcogenides have recently emerged as semiconducting alternatives to graphene in which the true two-dimensionality (2D) is expected to illuminate new semiconducting physics. Here we investigate excitons and trions (their singly charged counterparts) which have thus far been challenging to generate and control in the ultimate 2D limit. Utilizing high quality monolayer molybdenum diselenide (MoSe2), we report the unambiguous observation and electrostatic tunability of charging effects in positively charged (X+), neutral (Xo), and negatively charged (X-) excitons in field effect transistors via photoluminescence. The trion charging energy is large (30 meV), enhanced by strong confinement and heavy effective masses, while the linewidth is narrow (5 meV) at temperatures below 55 K. This is greater spectral contrast than in any known quasi-2D system. We also find the charging energies for X+ and X- to be nearly identical implying the same effective mass for electrons and holes.","abstract_license":"CC0-1.0 (arXiv descriptive metadata)","license":null,"is_open_access":true,"retracted":false,"peer_reviewed":null,"categories":["2D Materials and Applications"],"details":null,"provenance":"openalex+arxiv","attribution":"Abstract: arXiv descriptive metadata (CC0). Thank you to arXiv for use of its open access interoperability. This service was not reviewed or approved by, nor does it necessarily express or reflect the policies or opinions of, arXiv."},{"id":"doi:10.1038/s41586-021-03339-z","kind":"review","title":"Promises and prospects of two-dimensional transistors","authors":["Yuan Liu","Xidong Duan","Hyeon‐Jin Shin","Seongjun Park","Yu Huang","Xiangfeng Duan"],"author_count":6,"year":2021,"published":"2021-03-03","venue":"Nature","cited_by":1368,"doi":"10.1038/s41586-021-03339-z","arxiv_id":null,"nct_id":null,"source_url":"https://doi.org/10.1038/s41586-021-03339-z","archive_url":"https://space-kitty.com/papers/doi:10.1038/s41586-021-03339-z","updated":null,"pmid":"33658691","pmcid":null,"openalex_id":"W3133792218","pdf_url":null,"abstract":null,"abstract_license":null,"license":null,"is_open_access":false,"retracted":false,"peer_reviewed":null,"categories":["2D Materials and Applications"],"details":null,"provenance":"openalex","attribution":"Metadata and citation counts: OpenAlex (CC0)."},{"id":"doi:10.1002/anie.201411246","kind":"article","title":"Atomically Thin Arsenene and Antimonene: Semimetal–Semiconductor and Indirect–Direct Band‐Gap Transitions","authors":["Shengli Zhang","Zhong Yan","Yafei Li","Zhongfang Chen","Haibo Zeng"],"author_count":5,"year":2015,"published":"2015-01-07","venue":"Angewandte Chemie International Edition","cited_by":1531,"doi":"10.1002/anie.201411246","arxiv_id":null,"nct_id":null,"source_url":"https://doi.org/10.1002/anie.201411246","archive_url":"https://space-kitty.com/papers/doi:10.1002/anie.201411246","updated":null,"pmid":"25564773","pmcid":null,"openalex_id":"W2103291130","pdf_url":null,"abstract":null,"abstract_license":null,"license":null,"is_open_access":false,"retracted":false,"peer_reviewed":null,"categories":["2D Materials and Applications"],"details":null,"provenance":"openalex","attribution":"Metadata and citation counts: OpenAlex (CC0)."},{"id":"doi:10.1021/nl2018178","kind":"article","title":"How Good Can Monolayer MoS2 Transistors Be?","authors":["Youngki Yoon","Kartik Ganapathi","Sayeef Salahuddin"],"author_count":3,"year":2011,"published":"2011-07-26","venue":"Nano Letters","cited_by":1531,"doi":"10.1021/nl2018178","arxiv_id":null,"nct_id":null,"source_url":"https://doi.org/10.1021/nl2018178","archive_url":"https://space-kitty.com/papers/doi:10.1021/nl2018178","updated":null,"pmid":"21790188","pmcid":null,"openalex_id":"W2066083252","pdf_url":null,"abstract":null,"abstract_license":null,"license":null,"is_open_access":false,"retracted":false,"peer_reviewed":null,"categories":["2D Materials and Applications"],"details":null,"provenance":"openalex","attribution":"Metadata and citation counts: OpenAlex (CC0)."},{"id":"doi:10.1038/s41699-020-00162-4","kind":"article","title":"Bandgap engineering of two-dimensional semiconductor materials","authors":["Andrey Chaves","Javad G. Azadani","Hussain A. Alsalman","D. R. da Costa","Riccardo Frisenda","A. J. Chaves","Seung Hyun Song","Young Duck Kim","Daowei He","Jiadong Zhou","Andrés Castellanos-Gómez","François Maria Peeters","Zheng Liu","Christopher L. Hinkle","Sang‐Hyun Oh","Peide D. Ye","Steven J. Koester","Young Hee Lee","Phaedon Avouris","Xinran Wang","Tony Low"],"author_count":21,"year":2020,"published":"2020-08-24","venue":"npj 2D Materials and Applications","cited_by":1306,"doi":"10.1038/s41699-020-00162-4","arxiv_id":null,"nct_id":null,"source_url":"https://doi.org/10.1038/s41699-020-00162-4","archive_url":"https://space-kitty.com/papers/doi:10.1038/s41699-020-00162-4","updated":null,"pmid":null,"pmcid":null,"openalex_id":"W3080673473","pdf_url":"https://www.nature.com/articles/s41699-020-00162-4.pdf","abstract":"Abstract Semiconductors are the basis of many vital technologies such as electronics, computing, communications, optoelectronics, and sensing. Modern semiconductor technology can trace its origins to the invention of the point contact transistor in 1947. This demonstration paved the way for the development of discrete and integrated semiconductor devices and circuits that has helped to build a modern society where semiconductors are ubiquitous components of everyday life. A key property that determines the semiconductor electrical and optical properties is the bandgap. Beyond graphene, recently discovered two-dimensional (2D) materials possess semiconducting bandgaps ranging from the terahertz and mid-infrared in bilayer graphene and black phosphorus, visible in transition metal dichalcogenides, to the ultraviolet in hexagonal boron nitride. In particular, these 2D materials were demonstrated to exhibit highly tunable bandgaps, achieved via the control of layers number, heterostructuring, strain engineering, chemical doping, alloying, intercalation, substrate engineering, as well as an external electric field. We provide a review of the basic physical principles of these various techniques on the engineering of quasi-particle and optical bandgaps, their bandgap tunability, potentials and limitations in practical realization in future 2D device technologies.","abstract_license":"CC-BY (publisher license, via OpenAlex)","license":"cc-by","is_open_access":true,"retracted":false,"peer_reviewed":null,"categories":["2D Materials and Applications"],"details":null,"provenance":"openalex","attribution":"Abstract of \"Bandgap engineering of two-dimensional semiconductor materials\" by Andrey Chaves, Javad G. Azadani, Hussain A. Alsalman et al., https://doi.org/10.1038/s41699-020-00162-4, used under its Creative Commons Attribution license (CC-BY); markup removed, otherwise unmodified."},{"id":"doi:10.1038/s41565-020-0724-3","kind":"review","title":"Two-dimensional materials for next-generation computing technologies","authors":["Chunsen Liu","Huawei Chen","Shuiyuan Wang","Qi Liu","Yu–Gang Jiang","David Wei Zhang","Ming Liu","Peng Zhou"],"author_count":8,"year":2020,"published":"2020-07-01","venue":"Nature Nanotechnology","cited_by":1050,"doi":"10.1038/s41565-020-0724-3","arxiv_id":null,"nct_id":null,"source_url":"https://doi.org/10.1038/s41565-020-0724-3","archive_url":"https://space-kitty.com/papers/doi:10.1038/s41565-020-0724-3","updated":null,"pmid":"32647168","pmcid":null,"openalex_id":"W3041029313","pdf_url":null,"abstract":null,"abstract_license":null,"license":null,"is_open_access":false,"retracted":false,"peer_reviewed":null,"categories":["2D Materials and Applications"],"details":null,"provenance":"openalex","attribution":"Metadata and citation counts: OpenAlex (CC0)."},{"id":"doi:10.1039/c5cs00507h","kind":"review","title":"Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges","authors":["Xidong Duan","Chen Wang","A. Pan","Ruqin Yu","Xiangfeng Duan"],"author_count":5,"year":2015,"published":"2015-01-01","venue":"Chemical Society Reviews","cited_by":1164,"doi":"10.1039/c5cs00507h","arxiv_id":null,"nct_id":null,"source_url":"https://doi.org/10.1039/c5cs00507h","archive_url":"https://space-kitty.com/papers/doi:10.1039/c5cs00507h","updated":null,"pmid":"26479493","pmcid":null,"openalex_id":"W1868638423","pdf_url":null,"abstract":null,"abstract_license":null,"license":null,"is_open_access":false,"retracted":false,"peer_reviewed":null,"categories":["2D Materials and Applications"],"details":null,"provenance":"openalex","attribution":"Metadata and citation counts: OpenAlex (CC0)."},{"id":"arxiv:1412.0611","kind":"article","title":"Training and Operation of an Integrated Neuromorphic Network Based on Metal-Oxide Memristors","authors":["Mirko Prezioso","Farnood Merrikh-Bayat","Brian Hoskins","Gina Adam","Konstantin K. Likharev","Dmitri B. Strukov"],"author_count":6,"year":2014,"published":"2014-12-01","venue":"Nature, vol. 521, pp. 61-64, 2015","cited_by":3001,"doi":"10.1038/nature14441","arxiv_id":"1412.0611","nct_id":null,"source_url":"https://arxiv.org/abs/1412.0611","archive_url":"https://space-kitty.com/papers/arxiv:1412.0611","updated":"2014-12-01","pmid":null,"pmcid":null,"openalex_id":"W1542981317","pdf_url":"https://arxiv.org/pdf/1412.0611","abstract":"Despite all the progress of semiconductor integrated circuit technology, the extreme complexity of the human cerebral cortex makes the hardware implementation of neuromorphic networks with a comparable number of devices exceptionally challenging. One of the most prospective candidates to provide comparable complexity, while operating much faster and with manageable power dissipation, are so-called CrossNets based on hybrid CMOS/memristor circuits. In these circuits, the usual CMOS stack is augmented with one or several crossbar layers, with adjustable two-terminal memristors at each crosspoint. Recently, there was a significant progress in improvement of technology of fabrication of such memristive crossbars and their integration with CMOS circuits, including first demonstrations of their vertical integration. Separately, there have been several demonstrations of discrete memristors as artificial synapses for neuromorphic networks. Very recently such experiments were extended to crossbar arrays of phase-change memristive devices. The adjustment of such devices, however, requires an additional transistor at each crosspoint, and hence the prospects of their scaling are less impressive than those of metal-oxide memristors, whose nonlinear I-V curves enable transistor-free operation. Here we report the first experimental implementation of a transistor-free metal-oxide memristor crossbar with device variability lowered sufficiently to demonstrate a successful operation of a simple integrated neural network, a single layer-perceptron. The network could be taught in situ using a coarse-grain variety of the delta-rule algorithm to perform the perfect classification of 3x3-pixel black/white images into 3 classes. We believe that this demonstration is an important step towards the implementation of much larger and more complex memristive neuromorphic networks.","abstract_license":"CC0-1.0 (arXiv descriptive metadata)","license":null,"is_open_access":false,"retracted":false,"peer_reviewed":null,"categories":["cs.ET"],"details":null,"provenance":"arxiv","attribution":"Abstract: arXiv descriptive metadata (CC0). Thank you to arXiv for use of its open access interoperability. This service was not reviewed or approved by, nor does it necessarily express or reflect the policies or opinions of, arXiv."},{"id":"doi:10.1038/s41586-018-0574-4","kind":"article","title":"Solution-processable 2D semiconductors for high-performance large-area electronics","authors":["Zhaoyang Lin","Yuan Liu","Udayabagya Halim","Mengning Ding","Yuanyue Liu","Yiliu Wang","Chuancheng Jia","Peng Chen","Xidong Duan","Chen Wang","Frank Song","Mufan Li","Chengzhang Wan","Yu Huang","Xiangfeng Duan"],"author_count":15,"year":2018,"published":"2018-10-02","venue":"Nature","cited_by":960,"doi":"10.1038/s41586-018-0574-4","arxiv_id":null,"nct_id":null,"source_url":"https://doi.org/10.1038/s41586-018-0574-4","archive_url":"https://space-kitty.com/papers/doi:10.1038/s41586-018-0574-4","updated":null,"pmid":"30283139","pmcid":null,"openalex_id":"W2894645292","pdf_url":null,"abstract":null,"abstract_license":null,"license":null,"is_open_access":false,"retracted":false,"peer_reviewed":null,"categories":["2D Materials and Applications"],"details":null,"provenance":"openalex","attribution":"Metadata and citation counts: OpenAlex (CC0)."},{"id":"doi:10.1038/nature15387","kind":"article","title":"A subthermionic tunnel field-effect transistor with an atomically thin channel","authors":["Deblina Sarkar","Xuejun Xie","Wei Liu","Wei Cao","Jiahao Kang","Yongji Gong","Stephan Kräemer","Pulickel Madhavapanicker Ajayan","Kaustav Banerjee"],"author_count":9,"year":2015,"published":"2015-09-29","venue":"Nature","cited_by":974,"doi":"10.1038/nature15387","arxiv_id":null,"nct_id":null,"source_url":"https://doi.org/10.1038/nature15387","archive_url":"https://space-kitty.com/papers/doi:10.1038/nature15387","updated":null,"pmid":"26432247","pmcid":null,"openalex_id":"W2192681950","pdf_url":null,"abstract":null,"abstract_license":null,"license":null,"is_open_access":false,"retracted":false,"peer_reviewed":null,"categories":["2D Materials and Applications"],"details":null,"provenance":"openalex","attribution":"Metadata and citation counts: OpenAlex (CC0)."},{"id":"arxiv:2004.08077","kind":"article","title":"All-Optically Controlled Memristor","authors":["Lingxiang Hu","Jing Yang","Jingrui Wang","Peihong Cheng","Leon O. Chua","Fei Zhuge"],"author_count":6,"year":2020,"published":"2020-04-17","venue":"Advanced Functional Materials 2021, 31, 2005582","cited_by":464,"doi":"10.1002/adfm.202005582","arxiv_id":"2004.08077","nct_id":null,"source_url":"https://arxiv.org/abs/2004.08077","archive_url":"https://space-kitty.com/papers/arxiv:2004.08077","updated":"2020-04-17","pmid":null,"pmcid":null,"openalex_id":"W3107763902","pdf_url":"https://arxiv.org/pdf/2004.08077","abstract":"Memristors have emerged as key candidates for beyond-von-Neumann neuromorphic or in-memory computing owing to the feasibility of their ultrahigh-density three-dimensional integration and their ultralow energy consumption. A memristor is generally a two-terminal electronic element with conductance that varies nonlinearly with external electric stimuli and can be remembered when the electric power is turned off. As an alternative, light can be used to tune the memconductance and endow a memristor with a combination of the advantages of both photonics and electronics. Both increases and decreases in optically induced memconductance have been realized in different memristors; however, the reversible tuning of memconductance with light in the same device remains a considerable challenge that severely restricts the development of optoelectronic memristors. Here we describe an all-optically controlled (AOC) analog memristor with memconductance that is reversibly tunable over a continuous range by varying only the wavelength of the controlling light. Our memristor is based on the relatively mature semiconductor material InGaZnO (IGZO) and a memconductance tuning mechanism of light-induced electron trapping and detrapping. We demonstrate that spike-timing-dependent plasticity (STDP) learning can be realized in our device, indicating its potential applications in AOC spiking neural networks (SNNs) for highly efficient optoelectronic neuromorphic computing.","abstract_license":"CC0-1.0 (arXiv descriptive metadata)","license":null,"is_open_access":false,"retracted":false,"peer_reviewed":null,"categories":["cond-mat.mtrl-sci","physics.app-ph"],"details":null,"provenance":"arxiv","attribution":"Abstract: arXiv descriptive metadata (CC0). Thank you to arXiv for use of its open access interoperability. This service was not reviewed or approved by, nor does it necessarily express or reflect the policies or opinions of, arXiv."},{"id":"doi:10.1038/s41565-021-00963-8","kind":"article","title":"Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire","authors":["Taotao Li","Wei Guo","Liang Ma","Weisheng Li","Zhihao Yu","Zhen Han","Si Jian Gao","Lei Liu","Dongxu Fan","Zixuan Wang","Yang Yang","Weiyi Lin","Zhongzhong Luo","Xiaoqing Chen","Ningxuan Dai","Xuecou Tu","Danfeng Pan","Yagang Yao","Peng Wang","Yuefeng Nie","Jinlan Wang","Yi Shi","Xinran Wang"],"author_count":23,"year":2021,"published":"2021-09-02","venue":"Nature Nanotechnology","cited_by":815,"doi":"10.1038/s41565-021-00963-8","arxiv_id":null,"nct_id":null,"source_url":"https://doi.org/10.1038/s41565-021-00963-8","archive_url":"https://space-kitty.com/papers/doi:10.1038/s41565-021-00963-8","updated":null,"pmid":"34475559","pmcid":null,"openalex_id":"W3196767449","pdf_url":null,"abstract":null,"abstract_license":null,"license":null,"is_open_access":false,"retracted":false,"peer_reviewed":null,"categories":["2D Materials and Applications"],"details":null,"provenance":"openalex","attribution":"Metadata and citation counts: OpenAlex (CC0)."},{"id":"doi:10.1038/s41586-019-1052-3","kind":"article","title":"Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors","authors":["Yan Wang","Jong Chan Kim","Ryan J. Wu","Jenny Martinez","Xiuju Song","Jieun Yang","Fang Zhao","K. Andre Mkhoyan","Hu Young Jeong","Manish Chhowalla"],"author_count":10,"year":2019,"published":"2019-03-27","venue":"Nature","cited_by":902,"doi":"10.1038/s41586-019-1052-3","arxiv_id":null,"nct_id":null,"source_url":"https://doi.org/10.1038/s41586-019-1052-3","archive_url":"https://space-kitty.com/papers/doi:10.1038/s41586-019-1052-3","updated":null,"pmid":"30918403","pmcid":null,"openalex_id":"W2925008789","pdf_url":null,"abstract":null,"abstract_license":null,"license":null,"is_open_access":true,"retracted":false,"peer_reviewed":null,"categories":["2D Materials and Applications"],"details":null,"provenance":"openalex","attribution":"Metadata and citation counts: OpenAlex (CC0)."},{"id":"doi:10.1126/science.1234855","kind":"article","title":"Taxel-Addressable Matrix of Vertical-Nanowire Piezotronic Transistors for Active and Adaptive Tactile Imaging","authors":["Wenzhuo Wu","Xiaonan Wen","Zhong Lin Wang"],"author_count":3,"year":2013,"published":"2013-04-26","venue":"Science","cited_by":931,"doi":"10.1126/science.1234855","arxiv_id":null,"nct_id":null,"source_url":"https://doi.org/10.1126/science.1234855","archive_url":"https://space-kitty.com/papers/doi:10.1126/science.1234855","updated":null,"pmid":"23618761","pmcid":null,"openalex_id":"W1970961037","pdf_url":null,"abstract":null,"abstract_license":null,"license":null,"is_open_access":false,"retracted":false,"peer_reviewed":null,"categories":["Advanced Sensor and Energy Harvesting Materials"],"details":null,"provenance":"openalex","attribution":"Metadata and citation counts: OpenAlex (CC0)."},{"id":"doi:10.1038/nmat4802","kind":"article","title":"Buckled two-dimensional Xene sheets","authors":["Alessandro Molle","Joshua E. Goldberger","Michel Houssa","Yong Xu","Shoucheng Zhang","Deji Akinwande"],"author_count":6,"year":2017,"published":"2017-01-16","venue":"Nature Materials","cited_by":814,"doi":"10.1038/nmat4802","arxiv_id":null,"nct_id":null,"source_url":"https://doi.org/10.1038/nmat4802","archive_url":"https://space-kitty.com/papers/doi:10.1038/nmat4802","updated":null,"pmid":"28092688","pmcid":null,"openalex_id":"W2578263644","pdf_url":"https://lirias.kuleuven.be/retrieve/8146c2cd-c7f0-45ae-a77d-14e368527ee8","abstract":null,"abstract_license":null,"license":"other-oa","is_open_access":true,"retracted":false,"peer_reviewed":null,"categories":["2D Materials and Applications"],"details":null,"provenance":"openalex","attribution":"Metadata and citation counts: OpenAlex (CC0)."},{"id":"arxiv:2106.11808","kind":"article","title":"Fully CMOS-compatible passive TiO2-based memristor crossbars for in-memory computing","authors":["Abdelouadoud El Mesoudy","Gwénaëlle Lamri","Raphaël Dawant","Javier Arias-Zapata","Pierre Gliech","Yann Beilliard","Serge Ecoffey","Andreas Ruediger","Fabien Alibart","Dominique Drouin"],"author_count":10,"year":2021,"published":"2021-06-22","venue":"Microelectronic Engineering","cited_by":48,"doi":"10.1016/j.mee.2021.111706","arxiv_id":"2106.11808","nct_id":null,"source_url":"https://arxiv.org/abs/2106.11808","archive_url":"https://space-kitty.com/papers/arxiv:2106.11808","updated":"2021-12-08","pmid":null,"pmcid":null,"openalex_id":"W3175542906","pdf_url":"https://arxiv.org/pdf/2106.11808","abstract":"Brain-inspired computing and neuromorphic hardware are promising approaches that offer great potential to overcome limitations faced by current computing paradigms based on traditional von-Neumann architecture. In this regard, interest in developing memristor crossbar arrays has increased due to their ability to natively perform in-memory computing and fundamental synaptic operations required for neural network implementation. For optimal efficiency, crossbar-based circuits need to be compatible with fabrication processes and materials of industrial CMOS technologies. Herein, we report a complete CMOS-compatible fabrication process of TiO2-based passive memristor crossbars with 700 nm wide electrodes. We show successful bottom electrode fabrication by a damascene process, resulting in an optimised topography and a surface roughness as low as 1.1 nm. DC sweeps and voltage pulse programming yield statistical results related to synaptic-like multilevel switching. Both cycle-to-cycle and device-to-device variability are investigated. Analogue programming of the conductance using sequences of 200 ns voltage pulses suggest that the fabricated memories have a multilevel capacity of at least 3 bits due to the cycle-to-cycle reproducibility.","abstract_license":"CC0-1.0 (arXiv descriptive metadata)","license":null,"is_open_access":false,"retracted":false,"peer_reviewed":null,"categories":["cs.ET","physics.app-ph"],"details":null,"provenance":"arxiv","attribution":"Abstract: arXiv descriptive metadata (CC0). Thank you to arXiv for use of its open access interoperability. This service was not reviewed or approved by, nor does it necessarily express or reflect the policies or opinions of, arXiv."}],"next":"https://space-kitty.com/api/v1/topics/semiconductor-frontiers/papers?sort=top&limit=25&offset=25"}