# Spin filling of valley-orbit states in a silicon quantum dot

Article · W. H. Lim, C. H. Yang, F. A. Zwanenburg, A. S. Dzurak

- Archive id: arxiv:1103.2895
- Published: 2011-03-15
- Venue: Nanotechnology 22, 335704 (2011)
- DOI: https://doi.org/10.1088/0957-4484/22/33/335704
- arXiv: https://arxiv.org/abs/1103.2895
- Citations: 64
- Source URL: https://arxiv.org/abs/1103.2895
- PDF: https://arxiv.org/pdf/1103.2895
- Provenance: arxiv

## Abstract

We report the demonstration of a low-disorder silicon metal-oxide-semiconductor (Si MOS) quantum dot containing a tunable number of electrons from zero to N=27. The observed evolution of addition energies with parallel magnetic field reveals the spin filling of electrons into valley-orbit states. We find a splitting of 0.10 meV between the ground and first excited states, consistent with theory and placing a lower bound on the valley splitting. Our results provide optimism for the realization in the near future of spin qubits based on silicon quantum dots.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

Topics: [Photonic, Spin & Topological Qubits](https://space-kitty.com/topics/photonic-topological-qubits)

---
Space Kitty Archive · https://space-kitty.com · API: https://space-kitty.com/api/v1 · MCP: https://space-kitty.com/mcp · Premium: $0.20/request via x402 (Base Sepolia (testnet)). Metadata: arXiv (CC0), OpenAlex (CC0), Europe PMC (CC BY/CC0 works), ClinicalTrials.gov.