# Size-dependent Transport Study of In0.53Ga0.47As Gate-all-around Nanowire MOSFETs: Impact of Quantum Confinement and Volume Inversion

Article · Jiangjiang J. Gu, Heng Wu, Yiqun Liu, Adam T. Neal, Roy G. Gordon, Peide D. Ye

- Archive id: arxiv:1204.1665
- Published: 2012-04-07
- Venue: IEEE Electron Device Letters
- DOI: https://doi.org/10.1109/led.2012.2194690
- arXiv: https://arxiv.org/abs/1204.1665
- Citations: 53
- Source URL: https://arxiv.org/abs/1204.1665
- PDF: https://arxiv.org/pdf/1204.1665
- Provenance: arxiv

## Abstract

InGaAs gate-all-around nanowire MOSFETs with channel length down to 50nm have been experimentally demonstrated by top-down approach. The nanowire size-dependent transport properties have been systematically investigated. It is found that reducing nanowire dimension leads to higher on-current, transconductance and effective mobility due to stronger quantum confinement and the volume inversion effect. TCAD quantum mechanical simulation has been carried out to study the inversion charge distribution inside the nanowires. Volume inversion effect appears at a larger dimension for InGaAs nanowire MOSFET than its Si counterpart.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

Topics: [Semiconductor Device Frontiers](https://space-kitty.com/topics/semiconductor-frontiers)

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