# High-pressure effects on single crystals electron-doped r$_{2-x}$Ce$_{x}$CuO$_{4}$

Preprint · C. R. Rotundu, V. V. Struzhkin, M. S. Somayazulu, S. Sinogeikin, Russell J. Hemley, R. L. Greene

- Archive id: arxiv:1211.2871
- Published: 2012-11-13
- Venue: Physical Review B 87, 024506 (2013)
- DOI: https://doi.org/10.1103/physrevb.87.024506
- arXiv: https://arxiv.org/abs/1211.2871
- Source URL: https://arxiv.org/abs/1211.2871
- PDF: https://arxiv.org/pdf/1211.2871
- Provenance: arxiv

## Abstract

We present high pressure diamond anvil cell synchrotron X-ray, resistivity, and ac-susceptibility measurements on electron-doped cuprate Pr$\_{2-x}$Ce$\_{x}$CuO$\_{4}$ to much higher pressures than previously reported. At 2.72 GPa between 88 and 98$%$ of the superconducting T$^\\prime$ phase \\cite{Tprime} of the optimally doped Pr$\_{1.85}$Ce$\_{0.15}$CuO$\_{4}$ transforms into the insulating phase T. The T$\_{c}$ of the remaining 2-12$%$ T$^\\prime$ phase is suppressed continuously from 22 K to 18.5 K at about 14 GPa. Remarkably, the T$\_{c}$ of the over doped Pr$\_{1.83}$Ce$\_{0.17}$CuO$\_{4}$ remains practically unchanged even at 32 GPa. This behavior of the electron-doped cuprate contrasts with that of the hole-doped cuprate for which T$\_{c}$ is first substantially enhanced with applied pressure.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

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