# Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting

Article · C. H. Yang, A. Rossi, R. Ruskov, N. S. Lai, F. A. Mohiyaddin, S. Lee, C. Tahan, G. Klimeck, A. Morello, A. S. Dzurak

- Archive id: arxiv:1302.0983
- Published: 2013-02-05
- Venue: Nature Communications 4:2069 (2013)
- DOI: https://doi.org/10.1038/ncomms3069
- arXiv: https://arxiv.org/abs/1302.0983
- Citations: 304
- Source URL: https://arxiv.org/abs/1302.0983
- PDF: https://arxiv.org/pdf/1302.0983
- Provenance: arxiv

## Abstract

Although silicon is a promising material for quantum computation, the degeneracy of the conduction band minima (valleys) must be lifted with a splitting sufficient to ensure formation of well-defined and long-lived spin qubits. Here we demonstrate that valley separation can be accurately tuned via electrostatic gate control in a metal-oxide-semiconductor quantum dot, providing splittings spanning 0.3 - 0.8 meV. The splitting varies linearly with applied electric field, with a ratio in agreement with atomistic tight-binding predictions. We demonstrate single-shot spin readout and measure the spin relaxation for different valley configurations and dot occupancies, finding one-electron lifetimes exceeding 2 seconds. Spin relaxation occurs via phonon emission due to spin-orbit coupling between the valley states, a process not previously anticipated for silicon quantum dots. An analytical theory describes the magnetic field dependence of the relaxation rate, including the presence of a dramatic rate enhancement (or hot-spot) when Zeeman and valley splittings coincide.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

Topics: [Photonic, Spin & Topological Qubits](https://space-kitty.com/topics/photonic-topological-qubits)

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