# Band-like transport in high mobility unencapsulated single-layer MoS2 transistors

Article · Deep Jariwala, Vinod Kumar Sangwan, Dattatray J. Late, James E. Johns, Vinayak P. Dravid, Tobin Jay Marks, Lincoln J. Lauhon, Mark C. Hersam

- Archive id: arxiv:1304.5567
- Published: 2013-04-29
- Venue: Applied Physics Letters
- DOI: https://doi.org/10.1063/1.4803920
- arXiv: https://arxiv.org/abs/1304.5567
- Citations: 399
- Source URL: https://doi.org/10.1063/1.4803920
- PDF: https://arxiv.org/pdf/1304.5567
- Provenance: openalex+arxiv

## Abstract

Ultra-thin MoS2 has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (\>60 cm2/Vs at room temperature) field-effect transistors that employ unencapsulated single-layer MoS2 on oxidized Si wafers with a low level of extrinsic contamination. While charge transport in the sub-threshold regime is consistent with a variable range hopping model, monotonically decreasing field-effect mobility with increasing temperature suggests band-like transport in the linear regime. At temperatures below 100 K, temperature-independent mobility is limited by Coulomb scattering, whereas, at temperatures above 100 K, phonon-limited mobility decreases as a power law with increasing temperature.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

Topics: [Semiconductor Device Frontiers](https://space-kitty.com/topics/semiconductor-frontiers)

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