# Quantum spin Hall effect in two-dimensional transition metal dichalcogenides

Article · Xiaofeng Qian, Junwei Liu, Liang Fu, Ju Li

- Archive id: arxiv:1406.2749
- Published: 2014-11-21
- Venue: Science
- DOI: https://doi.org/10.1126/science.1256815
- arXiv: https://arxiv.org/abs/1406.2749
- PMID: 25504715
- Citations: 2,056
- Source URL: https://doi.org/10.1126/science.1256815
- PDF: https://arxiv.org/pdf/1406.2749
- Provenance: openalex+arxiv

## Abstract

We report a new class of large-gap quantum spin Hall insulators in two-dimensional transition metal dichalcogenides, namely, MX$\_2$ with M=(Mo, W) and X=(S, Se, and Te), whose topological electronic properties are highly tunable by external electric field. We propose a novel topological field effect transistor made of these atomic layer materials and their van der Waals heterostructures. Our device exhibits parametrically enhanced charge-spin conductance through topologically protected transport channels, and can be rapidly switched off by electric field through topological phase transition instead of carrier depletion. Our work provides a practical material platform and device architecture for topological quantum electronics.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

Topics: [2D Materials & Van der Waals Heterostructures](https://space-kitty.com/topics/2d-materials), [Topological Phases & Anyons](https://space-kitty.com/topics/topological-matter)

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