# Self-consistent Capacitance-Voltage Characterization of Gate-all-around Graded Nanowire Transistor

Preprint · Saeed Uz Zaman Khan, Md. Shafayat Hossain, Md. Obaidul Hossen, Fahim Ur Rahman, Rifat Zaman, Quazi D. M. Khosru

- Archive id: arxiv:1406.5257
- Published: 2014-06-20
- arXiv: https://arxiv.org/abs/1406.5257
- Citations: 1
- Source URL: https://arxiv.org/abs/1406.5257
- PDF: https://arxiv.org/pdf/1406.5257
- Provenance: arxiv

## Abstract

This paper presents a self-consistent numerical model for calculating the charge profile and gate capacitance and therefore obtaining C-V characterization for a gate-all-around graded nanowire MOSFET with a high mobility axially graded In0.75Ga0.25As + In0.53Ga0.47As channel incorporating strain and atomic layer deposited Al2O3/20nm Ti gate. C-V characteristics with introduction and variation of In-composition grading and also grading in doping concentration are explored.Finite element method has been used to solve Poisson's equation and Schrödinger's equation self-consistently considering wave function penetration and other quantum effects to calculate gate capacitance and charge profile for different gate biases. The device parameters are taken from a recently introduced experimental device.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

Topics: [Semiconductor Device Frontiers](https://space-kitty.com/topics/semiconductor-frontiers)

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