# High-Pressure Synthesis and Superconductivity of Ag-doped Topological Crystalline Insulator SnTe (Sn1-xAgxTe with x = 0-0.5)

Preprint · Yoshikazu Mizuguchi, Osuke Miura

- Archive id: arxiv:1602.05319
- Published: 2016-02-17
- Venue: J. Phys. Soc. Jpn. 85, 053702 (2016)
- DOI: https://doi.org/10.7566/jpsj.85.053702
- arXiv: https://arxiv.org/abs/1602.05319
- Source URL: https://arxiv.org/abs/1602.05319
- PDF: https://arxiv.org/pdf/1602.05319
- Provenance: arxiv

## Abstract

We have synthesized the single-phase polycrystalline samples of Sn1-xAgxTe, Ag-doped topological crystalline insulator SnTe, with a range of x = 0-0.5 using a high-pressure synthesis method. The crystal structure of Sn1-xAgxTe at room temperature is a cubic NaCl-type structure, which does not vary upon Ag substitution. Bulk superconductivity with a transition temperature of 2.4 K was observed for x = 0.15-0.25, and the optimal Ag content was x = 0.2. The Sn1-xAgxTe superconducting phase will be useful for understanding the superconductivity nature and mechanisms of the carrier-doped SnTe system.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

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