# Transition-metal dichalcogenide heterostructure solar cells: A numerical study

Article · A. Thilagam

- Archive id: arxiv:1605.03318
- Published: 2016-05-11
- Venue: Journal of Mathematical Chemistry
- DOI: https://doi.org/10.1007/s10910-016-0669-9
- arXiv: https://arxiv.org/abs/1605.03318
- Citations: 4
- Source URL: https://arxiv.org/abs/1605.03318
- PDF: https://arxiv.org/pdf/1605.03318
- Provenance: arxiv

## Abstract

We evaluate the tunneling short-circuit current density $J\_{TU}$ in a $p$-$i$-$n$ solar cell in which the transition metal dichalcogenide heterostructure (MoS$\_2$/WS$\_2$ superlattice) is embedded in the intrinsic $i$ region. The effects of varying well and barrier widths, Fermi energy levels and number of quantum wells in the $i$ region on $J\_{TU}$ are examined. A similar analysis is performed for the thermionic current $J\_{TH}$ that arises due to the escape and recapture of charge carriers between adjacent potential wells in the $i$-region. The interplay between $J\_{TU}$ and $J\_{TH}$ in the temperature range (300 K - 330 K) is examined. The thermionic current is seen to exceed the tunneling current considerably at temperatures beyond 310 K, a desirable attribute in heterostructure solar cells. This work demonstrates the versatility of monolayer transition metal dichalcogenides when utilized as fabrication materials for van der Waals heterostructure solar cells.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

Topics: [2D Materials & Van der Waals Heterostructures](https://space-kitty.com/topics/2d-materials)

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