# Computing with volatile memristors: An application of non-pinched hysteresis

Article · Y. V. Pershin, S. N. Shevchenko

- Archive id: arxiv:1611.08242
- Published: 2016-11-24
- Venue: Nanotechnology 28, 075204 (2017)
- DOI: https://doi.org/10.1088/1361-6528/aa53bf
- arXiv: https://arxiv.org/abs/1611.08242
- Citations: 10
- Source URL: https://arxiv.org/abs/1611.08242
- PDF: https://arxiv.org/pdf/1611.08242
- Provenance: arxiv

## Abstract

The possibility of in-memory computing with volatile memristive devices, namely, memristors requiring a power source to sustain their memory, is demonstrated. We have adopted a hysteretic graphene-based field emission structure as a prototype of volatile memristor, which is characterized by a non-pinched hysteresis loop. Memristive model of the structure is developed and used to simulate a polymorphic circuit implementing in-memory computing gates such as the material implication. Specific regions of parameter space realizing useful logic functions are identified. Our results are applicable to other realizations of volatile memory devices.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

Topics: [Semiconductor Device Frontiers](https://space-kitty.com/topics/semiconductor-frontiers)

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