# Steep-slope hysteresis-free negative capacitance MoS2 transistors

Article · Mengwei Si, Chun-Jung Su, Chunsheng Jiang, Nathan J. Conrad, Hong Yu Zhou, Kerry Maize, Gang Qiu, Chien-Ting Wu, Ali Shakouri, Muhammad Ashraful Alam, Peide D. Ye

- Archive id: arxiv:1704.06865
- Published: 2017-12-15
- Venue: Nature Nanotechnology
- DOI: https://doi.org/10.1038/s41565-017-0010-1
- arXiv: https://arxiv.org/abs/1704.06865
- PMID: 29255287
- Citations: 547
- Source URL: https://doi.org/10.1038/s41565-017-0010-1
- PDF: https://arxiv.org/pdf/1704.06865
- Provenance: openalex+arxiv

## Abstract

The so-called Boltzmann Tyranny defines the fundamental thermionic limit of the subthreshold slope (SS) of a metal-oxide-semiconductor field-effect transistor (MOSFET) at 60 mV/dec at room temperature and, therefore, precludes the lowering of the supply voltage and the overall power consumption. Adding a ferroelectric negative capacitor to the gate stack of a MOSFET may offer a promising solution to bypassing this fundamental barrier. Meanwhile, two-dimensional (2D) semiconductors, such as atomically thin transition metal dichalcogenides (TMDs) due to their low dielectric constant, and ease of integration in a junctionless transistor topology, offer enhanced electrostatic control of the channel. Here, we combine these two advantages and demonstrate for the first time a molybdenum disulfide (MoS2) 2D steep slope transistor with a ferroelectric hafnium zirconium oxide layer (HZO) in the gate dielectric stack. This device exhibits excellent performance in both on- and off-states, with maximum drain current of 510 μA/μm, sub-thermionic subthreshold slope and is essentially hysteresis-free. Negative differential resistance (NDR) was observed at room temperature in the MoS2 negative capacitance field-effect-transistors (NC-FETs) as the result of negative capacitance due to the negative drain-induced-barrier-lowering (DIBL). High on-current induced self-heating effect was also observed and studied.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

Topics: [Semiconductor Device Frontiers](https://space-kitty.com/topics/semiconductor-frontiers)

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