# In-field dependences of the critical current density J$_c$ in GdBa$_2$Cu$_3$O$_{7-d}$ coated conductors produced by Zr irradiation and post-annealing at low temperatures

Preprint · N. Haberkorn, S. Suárez, Jae-Hun Lee, S. H. Moon, Hunju Lee

- Archive id: arxiv:1806.04117
- Published: 2018-06-11
- Venue: Solid State Communications 289 (2019) 51-55
- DOI: https://doi.org/10.1016/j.ssc.2018.12.008
- arXiv: https://arxiv.org/abs/1806.04117
- Source URL: https://arxiv.org/abs/1806.04117
- PDF: https://arxiv.org/pdf/1806.04117
- Provenance: arxiv

## Abstract

We report the influence of 6 MeV Zr$^{4+}$ irradiation and post-irradiation annealing (200 °C) in the in-field dependences of the critical current densities J$\_c$ of 1.3 $μ$m thick GdBa$\_2$Cu$\_3$O$\_{7-d}$ coated conductors grown by co-evaporation. Samples were irradiated with 6 MeV Zr$^{4+}$ and fluences between 2.3x10$^{11}$ cm$^{-2}$ and 3x10$^{12}$ cm$^{-2}$. The correlation between the superconducting critical temperature T$\_c$ and in-field dependences of critical current densities J$\_c$ has been analyzed. In addition, random disorder introduced by irradiation was reduced by thermal annealed at 200 °C. The analysis of our experimental findings indicates that the optimal irradiation (reducing random disorder by annealing) results in the suppression of the self-field J$\_c$ of $\\simeq$ 10 $\\%$ and in-field J$\_c$ enhancements nearly doubled at about 5 T. A clear correlation between T$\_c$, disorder and self-field J$\_c$ is observed. Additional random disorder and nanoclusters suppress systematically T$\_c$ and increase the flux creep relaxation at intermediate temperatures (reducing the characteristic glassy $μ$ value).

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

---
Space Kitty Archive · https://space-kitty.com · API: https://space-kitty.com/api/v1 · MCP: https://space-kitty.com/mcp · Premium: $0.20/request via x402 (Base Sepolia (testnet)). Metadata: arXiv (CC0), OpenAlex (CC0), Europe PMC (CC BY/CC0 works), ClinicalTrials.gov.