# Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors

Article · J. G. Gluschke, J. Seidl, A. M. Burke, R. W. Lyttleton, D. J. Carrad, A. R. Ullah, S. Fahlvik Svensson, S. Lehmann, H. Linke, A. P. Micolich

- Archive id: arxiv:1810.03359
- Published: 2018-10-08
- Venue: Nanotechnology
- DOI: https://doi.org/10.1088/1361-6528/aaf1e5
- arXiv: https://arxiv.org/abs/1810.03359
- Citations: 19
- Source URL: https://arxiv.org/abs/1810.03359
- PDF: https://arxiv.org/pdf/1810.03359
- Provenance: arxiv

## Abstract

We introduce a fabrication method for gate-all-around nanowire field-effect transistors. Single nanowires were aligned perpendicular to underlying bottom gates using a resist-trench alignment technique. Top gates were then defined aligned to the bottom gates to form gate-all-around structures. This approach overcomes significant limitations in minimal obtainable gate length and gate-length control in previous horizontal wrap-gated nanowire transistors that arise because the gate is defined by wet etching. In the method presented here gate-length control is limited by the resolution of the electron-beam-lithography process. We demonstrate the versatility of our approach by fabricating a device with an independent bottom gate, top gate, and gate-all-around structure as well as a device with three independent gate-all-around structures with 300 nm, 200 nm, and 150 nm gate length. Our method enables us to achieve sub-threshold swings as low as 38 mV/dec at 77 K for a 150 nm gate length.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

Topics: [Semiconductor Device Frontiers](https://space-kitty.com/topics/semiconductor-frontiers)

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