# A ferroelectric semiconductor field-effect transistor

Article · Mengwei Si, Atanu K. Saha, Shengjie Gao, Gang Qiu, Jingkai Qin, Yuqin Duan, Jie Jian, Chang Niu, Haiyan Wang, Wenzhuo Wu, Sumeet K. Gupta, Peide D. Ye

- Archive id: arxiv:1812.02933
- Published: 2019-12-09
- Venue: Nature Electronics
- DOI: https://doi.org/10.1038/s41928-019-0338-7
- arXiv: https://arxiv.org/abs/1812.02933
- Citations: 655
- Source URL: https://doi.org/10.1038/s41928-019-0338-7
- PDF: https://arxiv.org/pdf/1812.02933
- Provenance: openalex+arxiv

## Abstract

Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are of potential to use in non-volatile memory technology, but suffer from short retention times, which limits their wider application. Here we report a ferroelectric semiconductor field-effect transistor in which a two-dimensional ferroelectric semiconductor, indium selenide (α-In2Se3), is used as the channel material in the device. α-In2Se3 was chosen due to its appropriate bandgap, room temperature ferroelectricity, ability to maintain ferroelectricity down to a few atomic layers, and potential for large-area growth. A passivation method based on the atomic-layer deposition of aluminum oxide (Al2O3) was developed to protect and enhance the performance of the transistors. With 15-nm-thick hafnium oxide (HfO2) as a scaled gate dielectric, the resulting devices offer high performance with a large memory window, a high on/off ratio of over 108, a maximum on-current of 862 μA μm-1, and a low supply voltage.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

Topics: [Semiconductor Device Frontiers](https://space-kitty.com/topics/semiconductor-frontiers)

Cited in dossiers:
- [Semiconductor Device Frontiers: State of the Field (October 2026)](https://space-kitty.com/dossiers/semiconductor-frontiers)

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