# Tunneling spectroscopy of localized states of $\mathrm{WS}_2$ barriers in vertical van der Waals heterostructures

Article · Nikos Papadopoulos, Pascal Gehring, Kenji Watanabe, Takashi Taniguchi, Herre S. J. van der Zant, Gary A. Steele

- Archive id: arxiv:1906.10389
- Published: 2019-06-25
- Venue: Phys. Rev. B 101, 165303 (2020)
- DOI: https://doi.org/10.1103/physrevb.101.165303
- arXiv: https://arxiv.org/abs/1906.10389
- Citations: 18
- Source URL: https://arxiv.org/abs/1906.10389
- PDF: https://arxiv.org/pdf/1906.10389
- Provenance: arxiv

## Abstract

In transition metal dichalcogenides, defects have been found to play an important role, affecting doping, spin-valley relaxation dynamics, and assisting in proximity effects of spin-orbit coupling. Here, we study localized states in $\\mathrm{WS}\_2$ and how they affect tunneling through van der Waals heterostructures of h-BN/graphene/$\\mathrm{WS}\_2$/metal. The obtained conductance maps as a function of bias and gate voltage reveal single-electron transistor behavior (Coulomb blockade) with a rich set of transport features including excited states and negative differential resistance regimes. Applying a perpendicular magnetic field, we observe a shift in the energies of the quantum levels and information about the orbital magnetic moment of the localized states is extracted.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

Topics: [2D Materials & Van der Waals Heterostructures](https://space-kitty.com/topics/2d-materials)

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