# Intrinsic quantized anomalous Hall effect in a moiré heterostructure

Article · M. Serlin, C. L. Tschirhart, H. Polshyn, Y. Zhang, J. Zhu, K. Watanabe, T. Taniguchi, Leon Balents, Andrea F. Young

- Archive id: arxiv:1907.00261
- Published: 2019-12-19
- Venue: Science
- DOI: https://doi.org/10.1126/science.aay5533
- arXiv: https://arxiv.org/abs/1907.00261
- PMID: 31857492
- Citations: 1,506
- Source URL: https://doi.org/10.1126/science.aay5533
- PDF: https://arxiv.org/pdf/1907.00261
- Provenance: openalex+arxiv

## Abstract

We report the observation of a quantum anomalous Hall effect in twisted bilayer graphene showing Hall resistance quantized to within .1\\% of the von Klitzing constant $h/e^2$ at zero magnetic field.The effect is driven by intrinsic strong correlations, which polarize the electron system into a single spin and valley resolved moiré miniband with Chern number $C=1$. In contrast to extrinsic, magnetically doped systems, the measured transport energy gap $Δ/k\_B\\approx 27$~K is larger than the Curie temperature for magnetic ordering $T\_C\\approx 9$~K, and Hall quantization persists to temperatures of several Kelvin. Remarkably, we find that electrical currents as small as 1~nA can be used to controllably switch the magnetic order between states of opposite polarization, forming an electrically rewritable magnetic memory.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

Topics: [Topological Phases & Anyons](https://space-kitty.com/topics/topological-matter)

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