# Landau Levels of Bilayer Graphene in a WSe$_2$/Bilayer Graphene van der Waals Heterostructure

Article · Ya-Wen Chuang, Jing Li, Hailong Fu, Kenji Watanabe, Takashi Taniguchi, Jun Zhu

- Archive id: arxiv:1910.10875
- Published: 2019-10-24
- Venue: Physical Review B 100, 195402 (2019)
- DOI: https://doi.org/10.1103/physrevb.100.195402
- arXiv: https://arxiv.org/abs/1910.10875
- Citations: 7
- Source URL: https://arxiv.org/abs/1910.10875
- PDF: https://arxiv.org/pdf/1910.10875
- Provenance: arxiv

## Abstract

Heterostructures formed between two different van der Waals materials enable interactions and functionalities absent in each component. In this work we show that vicinity to an atomically thin WSe$\_2$ sheet dramatically impacts the energies of the symmetry-broken low Landau levels of bilayer graphene, possibly due to screening. We present a systematic study of the magnetic field and electrical displacement field dependences of the Landau level gaps at filling factor $ν$ = 1, 2, 3, and compare to BN encapsulated pristine bilayer graphene. The exchange-dominated energy splitting between the N = 0 and 1 orbital wave functions is significantly enhanced, which leads to a modified phase diagram at filling factor $ν$ = 0 and larger energy gaps at $ν$ = 1 and 3 in WSe$\_2$/bilayer graphene heterostructures. The exchange-enhanced spin gap at $ν$ = 2, on the other hand, is reduced by approximately two-fold. Our results demonstrate a possible way to engineer quantum Hall phenomena via van der Waals heterostructures.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

Topics: [2D Materials & Van der Waals Heterostructures](https://space-kitty.com/topics/2d-materials)

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