# Demonstration of Electric Double Layer Gating under High Pressure by the Development of Field-Effect Diamond Anvil Cell

Article · Shintaro Adachi, Ryo Matsumoto, Sayaka Yamamoto, Takafumi D. Yamamoto, Kensei Terashima, Yoshito Saito, Miren Esparza Echevarria, Pedro Baptista de Castro, Peng Song, Suguru Iwasaki, Hiroyuki Takeya, Yoshihiko Takano

- Archive id: arxiv:2002.09835
- Published: 2020-02-23
- Venue: Appl. Phys. Lett. (2020)
- DOI: https://doi.org/10.1063/5.0004973
- arXiv: https://arxiv.org/abs/2002.09835
- Citations: 9
- Source URL: https://arxiv.org/abs/2002.09835
- PDF: https://arxiv.org/pdf/2002.09835
- Provenance: arxiv

## Abstract

We have developed an approach to control the carrier density in various material under high pressure by the combination of an electric double layer transistor (EDLT) with a diamond anvil cell (DAC). In this study, this EDLT-DAC was applied to a Bi thin film, and here we report the field-effect under high pressure in the material. Our EDLT-DAC is a promising device for exploring unknown physical phenomena such as high transition-temperature superconductivity (HTS).

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

Topics: [Superconducting Hydrides Under Pressure](https://space-kitty.com/topics/hydride-superconductors)

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