# Gate tunability of highly efficient spin-to-charge conversion by spin Hall effect in graphene proximitized with WSe$_2$

Article · Franz Herling, C. K. Safeer, Josep Ingla-Aynés, Nerea Ontoso, Luis E. Hueso, Fèlix Casanova

- Archive id: arxiv:2006.09227
- Published: 2020-06-16
- Venue: APL Materials 8, 071103 (2020)
- DOI: https://doi.org/10.1063/5.0006101
- arXiv: https://arxiv.org/abs/2006.09227
- Citations: 68
- Source URL: https://arxiv.org/abs/2006.09227
- PDF: https://arxiv.org/pdf/2006.09227
- Provenance: arxiv

## Abstract

The proximity effect opens ways to transfer properties from one material into another and is especially important in two-dimensional materials. In van der Waals heterostructures, transition metal dichalcogenides (TMD) can be used to enhance the spin-orbit coupling of graphene leading to the prediction of gate controllable spin-to-charge conversion (SCC). Here, we report for the first time and quantify the SHE in graphene proximitized with WSe$\_2$ up to room temperature. Unlike in other graphene/TMD devices, the sole SCC mechanism is the spin Hall effect and no Rashba-Edelstein effect is observed. Importantly, we are able to control the SCC by applying a gate voltage. The SCC shows a high efficiency, measured with an unprecedented SCC length larger than 20 nm. These results show the capability of two-dimensional materials to advance towards the implementation of novel spin-based devices and future applications.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

Topics: [2D Materials & Van der Waals Heterostructures](https://space-kitty.com/topics/2d-materials)

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