# Pressure-Induced Superconductivity in Layered Transition-metal Chalcogenides (Zr,Hf)GeTe$_{4}$ Explored by Data-driven Approach

Preprint · Ryo Matsumoto, Zhufeng Hou, Shintaro Adachi, Sayaka Yamamoto, Hiromi Tanaka, Hiroyuki Takeya, Tetsuo Irifune, Kiyoyuki Terakura, Yoshihiko Takano

- Archive id: arxiv:2006.16873
- Published: 2020-06-30
- DOI: https://doi.org/10.1021/acs.chemmater.1c00272
- arXiv: https://arxiv.org/abs/2006.16873
- Source URL: https://arxiv.org/abs/2006.16873
- PDF: https://arxiv.org/pdf/2006.16873
- Provenance: arxiv

## Abstract

Layered transition-metal chalcogenides (Zr,Hf)GeTe$\_{4}$ were screened out from database of Atomwork as a candidate for pressure-induced superconductivity due to their narrow band gap and high density of state near the Fermi level. The (Zr,Hf)GeTe$\_{4}$ samples were synthesized in single crystal and then the compositional ratio, crystal structures, and valence states were investigated via energy dispersive spectrometry, single crystal X-ray diffraction, and X-ray photoelectron spectroscopy, respectively. The pressure-induced superconductivity in both crystals were first time reported by using a diamond anvil cell with a boron-doped diamond electrode and an undoped diamond insulating layer. The maximum superconducting transition temperatures of ZrGeTe$\_{4}$ and HfGeTe$\_{4}$ were 6.5 K under 57 GPa and 6.6 K under 60 GPa, respectively.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

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