# Chern Insulators and Topological Flat-bands in Magic-angle Twisted Bilayer Graphene

Article · Shuang Wu, Zhenyuan Zhang, K. Watanabe, T. Taniguchi, Eva Y. Andrei

- Archive id: arxiv:2007.03735
- Published: 2020-07-07
- Venue: Nature Materials
- DOI: https://doi.org/10.1038/s41563-020-00911-2
- arXiv: https://arxiv.org/abs/2007.03735
- Citations: 358
- Source URL: https://arxiv.org/abs/2007.03735
- PDF: https://arxiv.org/pdf/2007.03735
- Provenance: arxiv

## Abstract

Magic-angle twisted bilayer graphene (MA-TBG) exhibits intriguing quantum phase transitions triggered by enhanced electron-electron interactions when its flat-bands are partially filled. However, the phases themselves and their connection to the putative non-trivial topology of the flat bands are largely unexplored. Here we report transport measurements revealing a succession of doping-induced Lifshitz transitions that are accompanied by van Hove singularities (VHS) which facilitate the emergence of correlation-induced gaps and topologically non-trivial sub-bands. In the presence of a magnetic field, well quantized Hall plateaus at filling of 1, 2, 3 carriers per moiré-cell reveal the sub-band topology and signal the emergence of Chern insulators with Chern-numbers, ! = !, !, !, respectively. Surprisingly, for magnetic fields exceeding 5T we observe a VHS at a filling of 3.5, suggesting the possibility of a fractional Chern insulator. This VHS is accompanied by a crossover from low-temperature metallic, to high-temperature insulating behavior, characteristic of entropically driven Pomeranchuk-like transitions,

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

Topics: [Moire & 2D Superconductivity](https://space-kitty.com/topics/moire-superconductivity)

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