# The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials

Article · Theresia Knobloch, Yu. Yu. Illarionov, Fabian Ducry, Christian Schleich, Stefan Wachter, Kenji Watanabe, Takashi Taniguchi, Thomas Mueller, Michael Waltl, Mario Lanza, Mikhail I. Vexler, Mathieu Luisier, Tibor Grasser

- Archive id: arxiv:2008.04144
- Published: 2021-02-23
- Venue: Nature Electronics
- DOI: https://doi.org/10.1038/s41928-020-00529-x
- arXiv: https://arxiv.org/abs/2008.04144
- Citations: 369
- Source URL: https://doi.org/10.1038/s41928-020-00529-x
- PDF: https://arxiv.org/pdf/2008.04144
- Provenance: openalex+arxiv

## Abstract

Complementary metal oxide semiconductor (CMOS) logic circuits at the ultimate scaling limit place the utmost demands on the properties of all materials involved. The requirements for semiconductors are well explored and could possibly be satisfied by a number of layered two-dimensional (2D) materials, like for example transition-metal dichalcogenides or black phosphorus. The requirements for the gate insulator are arguably even more challenging and difficult to meet. In particular the combination of insulator to semiconductor which forms the central element of the metal oxide semiconductor field effect transistor (MOSFET) has to be of superior quality in order to build competitive devices. At the moment, hexagonal boron nitride (hBN) is the most common two-dimensional insulator and widely considered to be the most promising gate insulator in nanoscaled 2D material-based transistors. Here, we critically assess the material parameters of hBN and conclude that while its properties render hBN an ideal candidate for many applications in 2D nanoelectronics, hBN is most likely not suitable as a gate insulator for ultrascaled CMOS devices.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

Topics: [Semiconductor Device Frontiers](https://space-kitty.com/topics/semiconductor-frontiers)

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