# Control of the exciton valley dynamics in van der Waals heterostructures

Article · A. I. Prazdnichnykh, M. M. Glazov, L. Ren, C. Robert, B. Urbaszek, X. Marie

- Archive id: arxiv:2010.01352
- Published: 2020-10-03
- Venue: Phys. Rev. B 103, 085302 (2021)
- DOI: https://doi.org/10.1103/physrevb.103.085302
- arXiv: https://arxiv.org/abs/2010.01352
- Citations: 21
- Source URL: https://arxiv.org/abs/2010.01352
- PDF: https://arxiv.org/pdf/2010.01352
- Provenance: arxiv

## Abstract

The exciton valley dynamics in van der Waals heterostructures with transition metal dichalcogenides monolayers is driven by the long-range exchange interaction between the electron and the hole in the exciton. It couples the states active in the opposite circular polarizations resulting in the longitudinal-transverse splitting of excitons propagating in the monolayer plane. Here we study theoretically the effect of the dielectric environment on the long-range exchange interaction and demonstrate how the encapsulation in the hexagonal boron nitride modifies the exciton longitudinal-transverse splitting. We calculate the exciton spin/valley polarization relaxation due to the long-range exchange interaction and demonstrate that the variation of the monolayer environment results in significant, up to five-fold, enhancement of the exciton valley polarization lifetime.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

Topics: [2D Materials & Van der Waals Heterostructures](https://space-kitty.com/topics/2d-materials)

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