# Monolithic thin-film chalcogenide-silicon tandem solar cells enabled by a diffusion barrier

Article · Alireza Hajijafarassar, Filipe Martinho, Fredrik Stulen, Sigbjørn Grini, Simón López-Mariño, Moises Espíndola-Rodríguez, Max Döbeli, Stela Canulescu, Eugen Stamate, Mungunshagai Gansukh, Sara Engberg, Andrea Crovetto, Lasse Vines, Jørgen Schou, Ole Hansen

- Archive id: arxiv:2010.09299
- Published: 2020-10-19
- Venue: Solar Energy Materials and Solar Cells
- DOI: https://doi.org/10.1016/j.solmat.2019.110334
- arXiv: https://arxiv.org/abs/2010.09299
- Citations: 47
- Source URL: https://arxiv.org/abs/2010.09299
- PDF: https://arxiv.org/pdf/2010.09299
- Provenance: arxiv

## Abstract

Following the recent success of monolithically integrated Perovskite/Si tandem solar cells, great interest has been raised in searching for alternative wide bandgap top-cell materials with prospects of a fully earth-abundant, stable and efficient tandem solar cell. Thin film chalcogenides (TFCs) such as the Cu2ZnSnS4 (CZTS) could be suitable top-cell materials. However, TFCs have the disadvantage that generally at least one high temperature step (\>500 C) is needed during the synthesis, which could contaminate the Si bottom cell. Here, we systematically investigate the monolithic integration of CZTS on a Si bottom solar cell. A thermally resilient double-sided Tunnel Oxide Passivated Contact (TOPCon) structure is used as bottom cell. A thin (\<25 nm) TiN layer between the top and bottom cells, doubles as diffusion barrier and recombination layer. We show that TiN successfully mitigates in-diffusion of CZTS elements into the c-Si bulk during the high temperature sulfurization process, and find no evidence of electrically active deep Si bulk defects in samples protected by just 10 nm TiN. Post-process minority carrier lifetime in Si exceeded 1.5 ,s. i.e., a promising implied open-circuit voltage (i-Voc) of 715 mV after the high temperature sulfurization. Based on these results, we demonstrate a first proof-of-concept two-terminal CZTS/Si tandem device with an efficiency of 1.1% and a Voc of 900 mV. A general implication of this study is that the growth of complex semiconductors on Si using high temperature steps is technically feasible, and can potentially lead to efficient monolithically integrated two-terminal tandem solar cells.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

Topics: [Perovskite & Tandem Photovoltaics](https://space-kitty.com/topics/advanced-photovoltaics)

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