# Contact-Barrier Free, High Mobility, Dual-Gated Junctionless Transistor Using Tellurium Nanowire

Article · Pushkar Dasika, Debadarshini Samantaray, Krishna Murali, Nithin Abraham, Kenji Watanabe, Takashi Taniguchi, N. Ravishankar, Kausik Majumdar

- Archive id: arxiv:2102.03507
- Published: 2021-02-06
- Venue: Advanced Functional Materials, 2021
- DOI: https://doi.org/10.1002/adfm.202006278
- arXiv: https://arxiv.org/abs/2102.03507
- Citations: 46
- Source URL: https://arxiv.org/abs/2102.03507
- PDF: https://arxiv.org/pdf/2102.03507
- Provenance: arxiv

## Abstract

Gate-all-around nanowire transistor, due to its extremely tight electrostatic control and vertical integration capability, is a highly promising candidate for sub-5 nm technology node. In particular, the junctionless nanowire transistors are highly scalable with reduced variability due to avoidance of steep source/drain junction formation by ion implantation. Here we demonstrate a dual-gated junctionless nanowire \\emph{p}-type field effect transistor using tellurium nanowire as the channel. The dangling-bond-free surface due to the unique helical crystal structure of the nanowire, coupled with an integration of dangling-bond-free, high quality hBN gate dielectric, allows us to achieve a phonon-limited field effect hole mobility of $570\\,\\mathrm{cm^{2}/V\\cdot s}$ at 270 K, which is well above state-of-the-art strained Si hole mobility. By lowering the temperature, the mobility increases to $1390\\,\\mathrm{cm^{2}/V\\cdot s}$ and becomes primarily limited by Coulomb scattering. \\txc{The combination of an electron affinity of $\\sim$4 eV and a small bandgap of tellurium provides zero Schottky barrier height for hole injection at the metal-contact interface}, which is remarkable for reduction of contact resistance in a highly scaled transistor. Exploiting these properties, coupled with the dual-gated operation, we achieve a high drive current of $216\\,\\mathrm{μA/μm}$ while maintaining an on-off ratio in excess of $2\\times10^4$. The findings have intriguing prospects for alternate channel material based next-generation electronics.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

Topics: [Semiconductor Device Frontiers](https://space-kitty.com/topics/semiconductor-frontiers)

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