# Susceptibility of Trapped-Ion Qubits to Low-Dose Radiation Sources

Preprint · Jiafeng Cui, A. J. Rasmusson, Marissa D'Onofrio, Yuanheng Xie, Evangeline Wolanski, Philip Richerme

- Archive id: arxiv:2105.02753
- Published: 2021-05-06
- Venue: J. Phys. B: At. Mol. Opt. Phys. 54, 13LT01 (2021)
- DOI: https://doi.org/10.1088/1361-6455/ac076c
- arXiv: https://arxiv.org/abs/2105.02753
- Source URL: https://arxiv.org/abs/2105.02753
- PDF: https://arxiv.org/pdf/2105.02753
- Provenance: arxiv

## Abstract

We experimentally study the real-time susceptibility of trapped-ion quantum systems to small doses of ionizing radiation. We expose an ion-trap apparatus to a variety of $α$, $β$, and $γ$ sources and measure the resulting changes in trapped-ion qubit lifetimes, coherence times, gate fidelities, and motional heating rates. We found no quantifiable degradation of ion trap performance in the presence of low-dose radiation sources for any of the measurements performed. This finding is encouraging for the long-term prospects of using ion-based quantum information systems in extreme environments, indicating that much larger doses may be required to induce errors in trapped-ion quantum processors.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

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