# Large zero bias peaks and dips in a four-terminal thin InAs-Al nanowire device

Article · Huading Song, Zitong Zhang, Dong Pan, Donghao Liu, Zhaoyu Wang, Zhan Cao, Lei Liu, Lianjun Wen, Dunyuan Liao, Ran Zhuo, Dong E Liu, Runan Shang, Jianhua Zhao, Hao Zhang

- Archive id: arxiv:2107.08282
- Published: 2021-07-17
- Venue: Phys. Rev. Research 4, 033235 (2022)
- DOI: https://doi.org/10.1103/physrevresearch.4.033235
- arXiv: https://arxiv.org/abs/2107.08282
- Citations: 46
- Source URL: https://arxiv.org/abs/2107.08282
- PDF: https://arxiv.org/pdf/2107.08282
- Provenance: arxiv+openalex

## Abstract

We report electron transport studies of a thin InAs-Al hybrid semiconductor-superconductor nanowire device using a four-terminal design. Compared to previous works, thinner InAs nanowire (diameter less than 40 nm) is expected to reach fewer sub-band regime. The four-terminal device design excludes electrode contact resistance, an unknown value which has inevitably affected previously reported device conductance. Using tunneling spectroscopy, we find large zero-bias peaks (ZBPs) in differential conductance on the order of $2e^2/h$. Investigating the ZBP evolution by sweeping various gate voltages and magnetic field, we find a transition between a zero-bias peak and a zero-bias dip while the zero-bias conductance sticks close to $2e^2/h$. We discuss a topologically trivial interpretation involving disorder, smooth potential variation and quasi-Majorana zero modes.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

Topics: [Topological Superconductivity & Majorana Modes](https://space-kitty.com/topics/topological-superconductivity)

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