# Electron-phonon coupling in a magic-angle twisted-bilayer graphene device

Preprint · Andreij C. Gadelha, Viet-Hung Nguyen, Eliel G. Neto, Fabiano Santana, Markus B. Raschke, Michael Lamparski, Vincent Meunier, Jean-Christophe Charlier, Ado Jorio

- Archive id: arxiv:2110.14916
- Published: 2021-10-28
- Venue: Nano Letters (2022); published version contains some important corrections
- DOI: https://doi.org/10.1021/acs.nanolett.2c00905
- arXiv: https://arxiv.org/abs/2110.14916
- Citations: 1
- Source URL: https://arxiv.org/abs/2110.14916
- PDF: https://arxiv.org/pdf/2110.14916
- Provenance: arxiv

## Abstract

The importance of phonons in the strong correlation phenomena observed in twisted bilayer graphene (TBG) at the so-called magic-angle is under debate. Here we apply gate-dependent micro-Raman spectroscopy to monitor the G band linewidth in TBG devices of twist angles $θ=0^{\\circ}$, $\\sim 1.1^{\\circ}$ (magic-angle) and $\\sim 7^{\\circ}$ (large angle). The results show a broad and p/n-asymmetric doping behavior at the magic-angle, in clear contrast to the behavior observed in twist angles above and below. Atomistic modeling reproduces the experimental observations, revealing how the unique electronic structure of magic-angle TBGs influences the electron-phonon coupling and, consequently, the G band linewidth. Our findings indicate a connection between electron-phonon coupling and experimental observations of strongly correlated phenomena in magic-angle TBG.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

Topics: [Moire & 2D Superconductivity](https://space-kitty.com/topics/moire-superconductivity)

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