# Development of SiGe Indentation Process Control for Gate-All-Around FET Technology Enablement

Article · Daniel Schmidt, Aron Cepler, Curtis Durfee, Shanti Pancharatnam, Julien Frougier, Mary Breton, Andrew Greene, Mark Klare, Roy Koret, Igor Turovets

- Archive id: arxiv:2201.04725
- Published: 2022-01-12
- Venue: IEEE Transactions on Semiconductor Manufacturing
- DOI: https://doi.org/10.1109/tsm.2022.3168585
- arXiv: https://arxiv.org/abs/2201.04725
- Citations: 20
- Source URL: https://arxiv.org/abs/2201.04725
- PDF: https://arxiv.org/pdf/2201.04725
- Provenance: arxiv

## Abstract

Methodologies for characterization of the lateral indentation of silicon-germanium (SiGe) nanosheets using different non-destructive and in-line compatible metrology techniques are presented and discussed. Gate-all-around nanosheet device structures with a total of three sacrificial SiGe sheets were fabricated and different etch process conditions used to induce indent depth variations. Scatterometry with spectral interferometry and x-ray fluorescence in conjunction with advanced interpretation and machine learning algorithms were used to quantify the SiGe indentation. Solutions for two approaches, average indent (represented by a single parameter) as well as sheet-specific indent, are presented. Both scatterometry with spectral interferometry as well as x-ray fluorescence measurements are suitable techniques to quantify the average indent through a single parameter. Furthermore, machine learning algorithms enable a fast solution path by combining x-ray fluorescence difference data with scatterometry spectra, therefore avoiding the need for a full optical model solution. A similar machine learning model approach can be employed for sheet-specific indent monitoring; however, reference data from cross-section transmission electron microscopy image analyses are required for training. It was found that scatterometry with spectral interferometry spectra and a traditional optical model in combination with advanced algorithms can achieve a very good match to sheet-specific reference data.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

Topics: [Semiconductor Device Frontiers](https://space-kitty.com/topics/semiconductor-frontiers)

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