# Theory of Silicon Spin Qubit Relaxation in a Synthetic Spin-Orbit Field

Article · Amin Hosseinkhani, Guido Burkard

- Archive id: arxiv:2201.13173
- Published: 2022-01-31
- Venue: Physical review. B./Physical review. B
- DOI: https://doi.org/10.1103/physrevb.106.075415
- arXiv: https://arxiv.org/abs/2201.13173
- Citations: 6
- Source URL: https://arxiv.org/abs/2201.13173
- PDF: https://arxiv.org/pdf/2201.13173
- Provenance: arxiv

## Abstract

We develop the theory of single-electron silicon spin qubit relaxation in the presence of a magnetic field gradient. Such field gradients are routinely generated by on-chip micromagnets to allow for electrically controlled quantum gates on spin qubits. We build on a valley-dependent envelope function theory that enables the analysis of the electron wave function in a silicon quantum dot with an arbitrary roughness at the interface. We assume the presence of single-layer atomic steps at a Si/SiGe interface and study how the presence of a gradient field modifies the spin-mixing mechanisms. We show that our theoretical modeling can quantitatively reproduce results of experimental measurements of qubit relaxation in silicon in the presence of a micromagnet. We further study in detail how a field gradient can modify the EDSR Rabi frequency of a silicon spin qubit. While this strongly depends on the details of the interface roughness, interestingly, we find that adding a micromagnet on top of a spin qubit with an ideal interface can even reduce the EDSR frequency within some interval of the external magnetic field strength.

_Abstract reproduced under CC0-1.0 (arXiv descriptive metadata)._

Topics: [Photonic, Spin & Topological Qubits](https://space-kitty.com/topics/photonic-topological-qubits)

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